Allicdata Part #: | BFR182TE6327-ND |
Manufacturer Part#: |
BFR 182T E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | TRANSISTOR RF NPN 12V SC-75 |
More Detail: | RF Transistor NPN 12V 35mA 8GHz 250mW Surface Moun... |
DataSheet: | BFR 182T E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 8GHz |
Noise Figure (dB Typ @ f): | 1.2dB ~ 1.9dB @ 900MHz ~ 1.8GHz |
Gain: | 20dB |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 8V |
Current - Collector (Ic) (Max): | 35mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | PG-SC-75 |
Base Part Number: | BFR182 |
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BFR 182T E6327 is an NPN high frequency transistor, specially developed for use in GHz high frequency circuits. It is a versatile device, which is suitable for numerous applications. This article will provide an overview of the application field and working principle of BFR 182T E6327.
BFR 182T E6327 has excellent high frequency performance, with very low input noise and high gain. It is ideal for use in VHF and UHF radio receivers, and can also be used in low frequency power amplifier applications. It can be used in a wide range of applications, such as frequency-conversion, IF, RF and baseband amplifiers, video amplifiers, modulators and mixers.
The BFR 182T E6327 has a high current-handling capability and is able to operate over a wide temperature range. It has a low voltage drop, making it suitable for various power supply solutions. The high frequency performance of the device makes it suitable for use in many applications, from audio to digital. It can be used in low noise amplification and signal-buffering, such as for digital/analog and IF converters, as well as in VCOs and PLLs.
The BFR 182T E6327 is also suitable for use in high frequency power amplifiers, with an operating frequency range of up to 10GHz. It has an excellent gain performance over a wide frequency range, with a minimum noise figure of 0.8 dB. The device is also well-suited to harmonic oscillators, oscillatory circuits and variable frequency circuits.
The working principle of BFR 182T E6327 is simple and straightforward. It is an NPN transistor, with a p-type emitter, n-type base and n-type collector region. When a voltage is applied to the base-emitter junction, electrons are injected from the emitter into the base region. These electrons are then attracted to the collector region, creating a base-collector current which is amplified by the transistor. The current gain of the transistor is determined by the ratio of the collector current to the base current.
The BFR 182T E6327 has a high operating temperature range and is suitable for many high frequency applications. It is an excellent choice for frequency-conversion, IF, RF and baseband amplifiers, as well as for various power applications. The gain performance over a wide frequency range makes it suitable for various low noise and power applications. In addition, the device is well-suited to harmonic oscillators, oscillatory circuits and variable frequency circuits.The device is highly reliable and capable of providing excellent performance over its operating temperature range.
The specific data is subject to PDF, and the above content is for reference
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