BSP316PE6327 Discrete Semiconductor Products |
|
Allicdata Part #: | BSP316PE6327INTR-ND |
Manufacturer Part#: |
BSP316PE6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 0.68A SOT223 |
More Detail: | P-Channel 100V 680mA (Ta) 1.8W (Ta) Surface Mount ... |
DataSheet: | BSP316PE6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2V @ 170µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | PG-SOT223-4 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.8W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 146pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 6.4nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 1.8 Ohm @ 680mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 680mA (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSP316PE6327 is a type of transistor, more specifically, a MOSFET (metal oxide semiconductor field-effect transistor). It is single in type, meaning it has three contacts, the source, gate, and drain. This MOSFET is N-channel enhancement type. This type of transistor is a three-terminal electronic device used in amplifying, switching, or protection circuits. The BSP316PE6327 has a wide range of applications, including in circuits such as audio amplifiers and car audio systems.
The BSP316PE6327 is also used in other applications that require large current operations such as motor control, powersupplies,and pulse-width-modulator (PWM) circuits. It can also be used in LED drivers and LED light applications. Additionally, the MOSFET can be used in appliances, home automation, and Arduino circuits due to its low voltage and low power consumption properties.
BSP316PE6327 transistors accommodate a wide range of power ratings which make them suitable for applications requiring high-current power switch control. Its gate threshold voltage is 4.5V max which makes it suitable for low voltage applications. The device also has an on-resistance of 3.9Ω max at 5V, making it a very efficient transistor.
The working principle of the BSP316PE6327 MOSFET is based on the principle of the MOS capacitor. A MOS capacitor is made up of two junctions, the gate and the drain-source. The gate junction of the MOSFET controls the drain-source voltage; i.e. it controls the conduction in the channel. When voltage is applied across the gate and source, a current is induced in the gate, which creates an electric field across the channel. This field increases the number of electrons in the channel, creating an inversion layer. The larger the number of electrons, the greater the current conduction. This defines the on-state resistance of the MOSFET.
The gate voltage is also used to turn the device off. When the gate electrode is maintained at a low voltage level, the inversion layer dissipates and the current in the channel reduces. This can be accomplished by applying a voltage equal to or lower than the threshold voltage, which is the minimum voltage to switch the transistor on or off. This state is referred to as the threshold voltage or Vth.
In conclusion, the BSP316PE6327 is a MOSFET which can be used in a variety of applications, including audio amplifiers and car audio systems. It can also be used in other applications that require large current operations such as motor control, powersupplies, and pulse-width-modulator (PWM) circuits. The device operates on the principle of a MOS capacitor, with a gate voltage controlling the inversion layer in the channel and the on-state resistance. The gate voltage also determines the switching on or off of the transistor.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSP3-277 | Thomas Resea... | 9.21 $ | 4985 | SURGE PROTECTOR 277V DRIV... |
BSP3-480-20KA | Thomas Resea... | 11.68 $ | 523 | SURGE PROTECTOR 480V-20KA |
BSP3-480-LC | Thomas Resea... | 7.81 $ | 137 | SURGE PROTECTOR 480V DRIV... |
BSP3-277-LC | Thomas Resea... | 8.6 $ | 102 | SURGE PROTECTOR 277V DRIV... |
BSP3-120 | Thomas Resea... | 9.21 $ | 236 | SURGE PROTECTOR 120V DRIV... |
BSP3-480 | Thomas Resea... | 9.49 $ | 306 | SURGE PROTECTOR 480V DRIV... |
BSP3-208/240-LC | Thomas Resea... | 9.91 $ | 213 | SURGE PROTECTOR 208/240V ... |
BSP3-277-20KA-TN | Thomas Resea... | 11.83 $ | 165 | SURGE PRTCTR 277V/20K W/N... |
BSP3-120-LC | Thomas Resea... | 8.6 $ | 74 | SURGE PROTECTOR 120V DRIV... |
BSP3-208/240 | Thomas Resea... | 9.21 $ | 28 | SURGE PROTECTOR 208/240V ... |
BSP3-347-LC | Thomas Resea... | 8.6 $ | 34 | SURGE PROTECTOR 347V DRIV... |
BSP3-480-20KA-TN | Thomas Resea... | 13.05 $ | 2 | SURGE PROTECTOR - 480V - ... |
BSP3-480-20K | Thomas Resea... | 13.72 $ | 1000 | LGHT PRTCT SURGE PROTECTO... |
BSP3-277-20KA | Thomas Resea... | 10.3 $ | 755 | SURGE PROTECTOR 277V-20KA |
BSP3-347 | Thomas Resea... | 9.21 $ | 8 | SURGE PROTECTOR 347V DRIV... |
BSP321PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 0.98A SO... |
BSP322PL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 1A SOT-2... |
BSP320SL6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.9A SOT-... |
BSP320SL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.9A SOT-... |
BSP324L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 400V 170MA SO... |
BSP315PE6327T | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 1.17A SOT... |
BSP316PE6327T | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 0.68A SO... |
BSP317PE6327T | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 250V 0.43A SO... |
BSP300 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 190MA SO... |
BSP300L6327HUSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 800V 190MA SO... |
BSP318S E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 2.6A SOT-... |
BSP320S E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.9A SOT-... |
BSP320S E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.9A SOT-... |
BSP324 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 400V 170MA SO... |
BSP372 E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 1.7A SOT... |
BSP373 E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 1.7A SOT... |
BSP315P-E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 60V 1.17A SOT... |
BSP316PE6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 0.68A SO... |
BSP317PE6327 | Infineon Tec... | -- | 1000 | MOSFET P-CH 250V 0.43A SO... |
BSP318SL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 2.6A SOT-... |
BSP32,115 | Nexperia USA... | 0.19 $ | 1000 | TRANS PNP 80V 1A SOT223Bi... |
BSP372NH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 1.7A SOT... |
BSP320SH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 2.9A SOT2... |
BSP373NH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 1.7A SOT... |
BSP33,115 | Nexperia USA... | 0.25 $ | 1000 | TRANS PNP 80V 1A SOT223Bi... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...