BSP316PE6327 Allicdata Electronics

BSP316PE6327 Discrete Semiconductor Products

Allicdata Part #:

BSP316PE6327INTR-ND

Manufacturer Part#:

BSP316PE6327

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 100V 0.68A SOT223
More Detail: P-Channel 100V 680mA (Ta) 1.8W (Ta) Surface Mount ...
DataSheet: BSP316PE6327 datasheetBSP316PE6327 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 170µA
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: PG-SOT223-4
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.8W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 146pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 6.4nC @ 10V
Series: SIPMOS®
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSP316PE6327 is a type of transistor, more specifically, a MOSFET (metal oxide semiconductor field-effect transistor). It is single in type, meaning it has three contacts, the source, gate, and drain. This MOSFET is N-channel enhancement type. This type of transistor is a three-terminal electronic device used in amplifying, switching, or protection circuits. The BSP316PE6327 has a wide range of applications, including in circuits such as audio amplifiers and car audio systems.

The BSP316PE6327 is also used in other applications that require large current operations such as motor control, powersupplies,and pulse-width-modulator (PWM) circuits. It can also be used in LED drivers and LED light applications. Additionally, the MOSFET can be used in appliances, home automation, and Arduino circuits due to its low voltage and low power consumption properties.

BSP316PE6327 transistors accommodate a wide range of power ratings which make them suitable for applications requiring high-current power switch control. Its gate threshold voltage is 4.5V max which makes it suitable for low voltage applications. The device also has an on-resistance of 3.9Ω max at 5V, making it a very efficient transistor.

The working principle of the BSP316PE6327 MOSFET is based on the principle of the MOS capacitor. A MOS capacitor is made up of two junctions, the gate and the drain-source. The gate junction of the MOSFET controls the drain-source voltage; i.e. it controls the conduction in the channel. When voltage is applied across the gate and source, a current is induced in the gate, which creates an electric field across the channel. This field increases the number of electrons in the channel, creating an inversion layer. The larger the number of electrons, the greater the current conduction. This defines the on-state resistance of the MOSFET.

The gate voltage is also used to turn the device off. When the gate electrode is maintained at a low voltage level, the inversion layer dissipates and the current in the channel reduces. This can be accomplished by applying a voltage equal to or lower than the threshold voltage, which is the minimum voltage to switch the transistor on or off. This state is referred to as the threshold voltage or Vth.

In conclusion, the BSP316PE6327 is a MOSFET which can be used in a variety of applications, including audio amplifiers and car audio systems. It can also be used in other applications that require large current operations such as motor control, powersupplies, and pulse-width-modulator (PWM) circuits. The device operates on the principle of a MOS capacitor, with a gate voltage controlling the inversion layer in the channel and the on-state resistance. The gate voltage also determines the switching on or off of the transistor.

The specific data is subject to PDF, and the above content is for reference

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