BSS138DWQ-13 Allicdata Electronics
Allicdata Part #:

BSS138DWQ-13-ND

Manufacturer Part#:

BSS138DWQ-13

Price: $ 0.08
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET 2NCH 50V 200MA SOT363
More Detail: Mosfet Array 2 N-Channel (Dual) 50V 200mA 200mW Su...
DataSheet: BSS138DWQ-13 datasheetBSS138DWQ-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.07227
Stock 1000Can Ship Immediately
$ 0.08
Specifications
Current - Continuous Drain (Id) @ 25°C: 200mA
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: --
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 200mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 50V
Description

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The BSS138DWQ-13 is a tiniest 2-Element N-channel transistor array which contains two FET (Field Effect Transistors) transistors that are built into a single package. The BSS138DWQ-13 is one of the most popular and reliable components of its kind and was designed to be used in low power, low noise electronics applications. A combination of two FETs in one package is called an array.

The BSS138DWQ-13 typically has an off-state cut-off current of 10nA and an on-state drain-source current of 35mA. The gate threshold voltage is typically 5V and the maximum drain-source voltage is 40V. It also has an unlimited number of channels and can be configured in various ways to meet the needs of different applications.

BSS138DWQ-13 is commonly used in consumer electronics such as audio systems, medical electronics, industrial equipment, LED lighting systems and automotive applications. The array can also be used for heat energy control for cooling systems and temperature regulation in industrial electronic systems. The array can also be used for signal amplification in audio applications with high-level transceivers and for power management in television and computer systems.

The working principle of the BSS138DWQ-13 is based on the physics of semiconductors. FET transistors are made up of three terminals, which are the gate, the source, and the drain. The gate, which is an insulating layer, controls the amount of current passing through the channel between the source and the drain. An electric field is generated between the gate and the source and this field controls the flow of current between the drain and the source. By controlling the Gate-Source voltage, the amount of current passing between the drain and the source can be regulated, allowing for the amplification or attenuation of signals.

In applications such as audio systems, the BSS138DWQ-13 array can be used to control the frequency and amplitude of an audio signal. The array is also used in TV and computer systems as a power management device. By controlling the Gate-Source voltage, the amount of power consumption can be regulated, allowing for more efficient operation of the system. Furthermore, the BSS138DWQ-13 array can be used in medical electronics for signal amplification in MRI systems and ultrasound imaging systems.

The BSS138DWQ-13 array is an ideal solution for applications requiring a reliable, efficient, and economical transistor solution. It is a robust array that has low operating voltages, high current and low on state resistance, making it suitable for both low-power and high-power applications. Furthermore, it is designed to be very small and takes up minimal board space, which further increases its efficiency and cost-effectiveness for various electronic systems.

The specific data is subject to PDF, and the above content is for reference

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