Allicdata Part #: | BSS138NE7854-ND |
Manufacturer Part#: |
BSS138N E7854 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 230MA SOT-23 |
More Detail: | N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS138N E7854 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 230mA, 10V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 41pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS138N E7854 is a N-channel enhancement mode field-effect transistor (FET) also known as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). This transistor is designed primarily for low voltage (12V) and low current (<1A) applications and is available in both through-hole and surface-mount packages. The BSS138N E7854 is composed of a N-channel FET with two primarily elements, the drain and the gate, and one control element, the source. This type of transistor requires very little current to power it, allowing it to deliver very high performance in low power applications.
The working principle of the BSS138N E7854 is based on capacitive effect. The capacitance between the gate and drain terminals creates an electric field that in turn controls the flow of electrons through the transistor. When the gate is at a negative voltage relative to the source, the electric field between the gate and drain terminals is increased, causing electrons to flow through the transistor. When the gate is at a positive voltage relative to the source, the electric field is decreased, causing electrons to flow in the opposite direction and blocking the current.
The BSS138N E7854 is primarily used in low-frequency switching applications, such as LED drivers, motor control, switching power supplies, and motor speed control. It is particularly useful in applications where low power consumption is important, as it requires very little current to power it. Furthermore, due to its low input capacitance and low on-state resistance, this transistor is ideal for high-speed switching operations. It is also particularly useful in high-input impedance circuits, such as those found in communication systems.
The BSS138N E7854 is increasingly becoming a popular choice for low-power applications due to its low voltage operation and low input capacitance. In addition, its low on-state resistance makes it ideal for high-speed switching operations and its high-input impedance makes it suitable for communication systems. In conclusion, the BSS138N E7854 is an ideal choice for low-power low-frequency switching and communication applications due to its low power requirements and low on-state resistance.
The specific data is subject to PDF, and the above content is for reference
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