
Allicdata Part #: | BSS127L6327HTSA1TR-ND |
Manufacturer Part#: |
BSS127L6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 600V 0.021A SOT-23 |
More Detail: | N-Channel 600V 21mA (Ta) 500mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.6V @ 8µA |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 28pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 500 Ohm @ 16mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 21mA (Ta) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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BSS127L6327HTSA1 is a single, enhanced N-Channel MOSFET device. It offers outstanding rds(on) performance, very low gate charge, Coss and body-drain diode avalanche rating characteristics suitable for automotive and other harsh conditions applications. It is commonly used in a wide variety of applications, including high speed switching, various power applications, and consumer electronics.
BSS127L6327HTSA1 Application Field
The BSS127L6327HTSA1 is ideal for use set in applications where fast switching is desired, such as motor control and solenoid switching. Additionally, it is also suitable for applications such as lighting circuits, switch-mode power supplies, and high current, low voltage “Hot Swap®” applications. Furthermore, the BSS127L6327HTSA1 is often used in low-side switches, especially in off-board battery charging systems and automotive applications.
Working Principle of BSS127L6327HTSA1
BSS127L6327HTSA1 is a voltage-controlled device, with an N-channel MOSFET as a type of multi-gate field-effect transistor. As a result, it uses a more efficient system to control the current flow through its channel. This type of MOSFET is commonly found in higher power applications due to its increased channel width, meaning it can carry more current than the other types of MOSFETs. Furthermore, its enhanced design offers faster switching, lower power consumption, and improved temperature stability.
When applying voltage to the gate, the electrons move through the channel and accelerate the current flow through the device. This phenomenon is called enhanced switching, and it occurs due to the increased width of the channel, as well as its low resistance. As a result, the voltage drop across the transistor is minimized. This makes the transistor ideal for applications where fast switching, power efficiency, and temperature stability matter.
When the applied voltage is lower than Gate-Source voltage (VGS) the device is in its off state, while higher applied voltage leads to the device’s on state. In the on state, a large amount of current flows through the channel, as well as a heat dissipation. The heat dissipation is a result of the large amount of power dissipated by the device, and it must be taken into account when designing the circuit. The temperature of the device should be monitored and the power dissipation should be reduced if necessary, in order to avoid damaging the device.
Lastly, the BSS127L6327HTSA1 is designed to improve the switching performance of the system. Its advanced design allows for efficient energy conversion, leading to improved overall performance of the system. Additionally, its built-in protection circuit keeps the device from being damaged due to overvoltage and excessive current.
In conclusion, the BSS127L6327HTSA1 is an ideal choice for a variety of applications due to its fast switching capabilities and reduced power consumption. It is found in a wide range of applications, including motor control, low voltage power supplies, and off-board battery charging systems. Furthermore, its improved design provides enhanced switching performance, temperature stability, and reliable protection from overvoltage and excessive current.
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