Allicdata Part #: | BSS138WL6327-ND |
Manufacturer Part#: |
BSS138W L6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 280MA SOT-323 |
More Detail: | N-Channel 60V 280mA (Ta) 500mW (Ta) Surface Mount ... |
DataSheet: | BSS138W L6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: | 1.4V @ 26µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 43pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 500mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT323-3 |
Package / Case: | SC-70, SOT-323 |
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The BSS138W L6327 is a high-power, N-channel MOSFET, switching device engineered to perform fast switching operations and suitable for medium to high power applications. It is manufactured by STMicroelectronics, one of the leading worldwide semiconductor companies, and marketed under the TFET (Thin Film Transistor) series. It is a MOSFET device with a single channel.
The BSS138W L6327 is a typically used in power supply applications where high switching speeds are needed. It is highly efficient in power conversion and has a low on-state resistance, which gives it a low dropout voltage, even when suppressed. Moreover, it has excellent protection against surge stresses, ESD, hot carrier injection and other harmful effects of high voltage.
The working principle of the BSS138W L6327 is very simple. It works on the principle of utilizing a field-effect transistor (FET), which is basically a three-electrode, unipolar semiconductor device, to control voltages and currents. The device contains two types of active regions; one the source, and the other the drain. When an electric voltage is applied between the source and the gate (the third electrode), it enables a charge carrier (electrons or holes) to flow from the source to the drain. Thus, the current between the gate and the drain of an FET is usually proportional to the voltage applied between the source and the gate. Thus, this is the basic principle on which the BSS138W L6327 operates.
On the other hand, the BSS138W L6327 also utilizes the characteristic of an N-channel MOSFET, which is basically an insulated gate FET with an electrically-insulated gate region between the source and the drain. This insulated gate region forms a barrier between the source and the drain so that current only flows when there is a voltage applied between the gate and the source, thus allowing the device to act as a switch. The MOSFET has the advantage of being able to control large currents rapidly, providing fast switching and higher efficiency than BJTs.
The BSS138W L6327 is a great choice for applications where fast switching is needed and high efficiency is desired. It has a wide operating voltage range and provides excellent protection against aliasing and ESD. Moreover, it is also suitable for applications where high power needs to be efficiently converted. All of these features make it a great solution for high-power applications.
The specific data is subject to PDF, and the above content is for reference
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