
Allicdata Part #: | BSS138WL6327-ND |
Manufacturer Part#: |
BSS138W L6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 280MA SOT-323 |
More Detail: | N-Channel 60V 280mA (Ta) 500mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 1.4V @ 26µA |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | PG-SOT323-3 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 43pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 10V |
Series: | SIPMOS® |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 220mA, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 280mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BSS138W L6327 is a high-power, N-channel MOSFET, switching device engineered to perform fast switching operations and suitable for medium to high power applications. It is manufactured by STMicroelectronics, one of the leading worldwide semiconductor companies, and marketed under the TFET (Thin Film Transistor) series. It is a MOSFET device with a single channel.
The BSS138W L6327 is a typically used in power supply applications where high switching speeds are needed. It is highly efficient in power conversion and has a low on-state resistance, which gives it a low dropout voltage, even when suppressed. Moreover, it has excellent protection against surge stresses, ESD, hot carrier injection and other harmful effects of high voltage.
The working principle of the BSS138W L6327 is very simple. It works on the principle of utilizing a field-effect transistor (FET), which is basically a three-electrode, unipolar semiconductor device, to control voltages and currents. The device contains two types of active regions; one the source, and the other the drain. When an electric voltage is applied between the source and the gate (the third electrode), it enables a charge carrier (electrons or holes) to flow from the source to the drain. Thus, the current between the gate and the drain of an FET is usually proportional to the voltage applied between the source and the gate. Thus, this is the basic principle on which the BSS138W L6327 operates.
On the other hand, the BSS138W L6327 also utilizes the characteristic of an N-channel MOSFET, which is basically an insulated gate FET with an electrically-insulated gate region between the source and the drain. This insulated gate region forms a barrier between the source and the drain so that current only flows when there is a voltage applied between the gate and the source, thus allowing the device to act as a switch. The MOSFET has the advantage of being able to control large currents rapidly, providing fast switching and higher efficiency than BJTs.
The BSS138W L6327 is a great choice for applications where fast switching is needed and high efficiency is desired. It has a wide operating voltage range and provides excellent protection against aliasing and ESD. Moreover, it is also suitable for applications where high power needs to be efficiently converted. All of these features make it a great solution for high-power applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSS139H6906XTSA1 | Infineon Tec... | 0.18 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS192PH6327XTSA1 | Infineon Tec... | 0.14 $ | 1000 | MOSFET P-CH 250V 190MA SO... |
BSS138-T | ON Semicondu... | -- | 1000 | INTEGRATED CIRCUITN-Chann... |
BSS138NH6433XTMA1 | Infineon Tec... | 0.04 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS123-7-F | Diodes Incor... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS123LT3G | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS159NH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS123NH6327XTSA1 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 0.19A SO... |
BSS138P,215 | Nexperia USA... | 0.04 $ | 246000 | MOSFET N-CH 60V 360MA TO-... |
BSS127L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS138PS,115 | Nexperia USA... | 0.06 $ | 1000 | MOSFET 2N-CH 60V 0.32A 6T... |
BSS138DW-7 | Diodes Incor... | 0.0 $ | 1000 | MOSFET 2N-CH 50V 0.2A SC7... |
BSS138LT1G | ON Semicondu... | -- | 50000 | MOSFET N-CH 50V 200MA SOT... |
BSS138-D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 0.22A SOT... |
BSS123LT1G | ON Semicondu... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138WH6327XTSA1 | Infineon Tec... | -- | 72000 | MOSFET N-CH 60V 280MA SOT... |
BSS119L6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 50V 200MA SOT... |
BSS126L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS123_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS119 E7978 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138N E7854 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS139L6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS138W | ON Semicondu... | -- | 1000 | MOSFET N-CH 50V 0.21A SOT... |
BSS123TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS127SSN-7 | Diodes Incor... | -- | 6000 | MOSFET N-CH 600V 50MA SC5... |
BSS127S-7 | Diodes Incor... | -- | 42000 | MOSFET N-CH 600V 0.05A SO... |
BSS159NH6906XTSA1 | Infineon Tec... | 0.19 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS169H6906XTSA1 | Infineon Tec... | 0.2 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS119E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138W-7 | Diodes Incor... | -- | 1000 | MOSFET N-CH 50V 0.2A SOT3... |
BSS169H6327XTSA1 | Infineon Tec... | -- | 50000 | MOSFET N-CH 100V 170MA SO... |
BSS138PW,115 | Nexperia USA... | 0.04 $ | 1000 | MOSFET N-CH 60V 320MA SOT... |
BSS123NH6433XTMA1 | Infineon Tec... | 0.04 $ | 1000 | MOSFET N-CH 100V 0.19A SO... |
BSS159NL6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS138K | ON Semicondu... | -- | 42000 | MOSFET N-CH 50V 220MA SOT... |
BSS139 E6906 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS126H6327XTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS138 | ON Semicondu... | -- | 124 | MOSFET N-CH 50V 220MA SOT... |
BSS123E6327 | Infineon Tec... | -- | 1000 | MOSFET N-CH 100V 170MA SO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
