Allicdata Part #: | BSS159NL6906HTSA1TR-ND |
Manufacturer Part#: |
BSS159NL6906HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 230MA SOT-23 |
More Detail: | N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS159NL6906HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 160mA, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 26µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.9nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 44pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS159NL6906HTSA1 is a 30V N-channel Enhancement Mode Power MOSFET which features four terminals, gate source drain and drain source. This type of transistor is categorized into transistors- FETs (field effect transistors) and MOSFETs (metal oxide semiconductor field effect transistors) and more specifically into singles- meaning it operates as a single-channel device.
BSS159NL6906HTSA1 is used in a variety of applications and its applications range from battery operated audio frequency signal processing to high speed switching and Class D audio amplifiers. It is also used in the automotive and industrial sectors. BSS159NL6906HTSA1 provides excellent switching performance and due to its low on-state resistance (RDS = 5 mOhms max) efficiency can be maximized especially as it relates to low voltage/low current applications.
BSS159NL6906HTSA1 works using FET technology which is based on a semiconductor junction of two complementary materials. This creates an electret field type of conductivity similar to that of a diode, allowing carriers of electrical current “holes” to travel from source to drain and vise versa. The gate of the transistor controls the number of carriers that are allowed to travel by providing them access through a barrier of energy. The more input electrical energy that is applied to the gate, the number of carriers will increase and when the voltage is reversed, the number of carriers is reduced.
The two main advantages of BSS159NL6906HTSA1 are low input/output capacitance and excellent thermal characteristics. The low capacitance (2.2 pF typical) will reduce switching losses when operating at high frequencies, while the superior thermal characteristics provide quicker thermal regulation, allowing operation at high temperature levels and improved reliability. BSS159NL6906HTSA1 also offers a low gate charge (9 nC typical) which greatly reduces switching losses and reduces switching time since the gate does not require much time to charge/discharge.
In summary, BSS159NL6906HTSA1 is a 30V N-channel Enhancement Mode Power MOSFET which belongs to the transistors- FETs and MOSFETs and Single categories. It provides excellent switching performance, low input/output capacitance, excellent thermal characteristics, and low gate charge which make it ideal for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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