BSS138_L99Z

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BSS138_L99Z is a family of single-gate MOSFETs that offer a low source-drain capacitance, enabling a wide range of applications where minimizing power consumption is essential. It includes two device types: N-channel MOSFETs and P-channel MOSFETs.

BSS138_L99Z is used in applications such as low-noise amplifier, battery-powered circuits, low voltage systems, logic level translator, and low-side switching. It is also used in high-density circuits applications, in which low source-drain capacitance is essential.

The working principle of BSS138_L99Z is based on the MOSFET drain-source structure, which consists of three elements: gate, drain and source. The gate acts as a switch, controlling the flow of current between the source and drain terminals. The application of a positive or negative voltage to the gate allows the flow of current between the drain and the source; alternatively, the gate voltage can be zero and the flow of current is blocked.

BSS138_L99Z uses a double-diffused dopant process for better performance, providing higher switching speeds and lower power dissipation. Its channel width is small, which improves the off-state drain-source resistance. This leads to improved power- and energy-efficiency.

BSS138_L99Z is also suitable for operation in low voltage systems, since its threshold voltage is adjustable. The device includes a VGS adjustable resistor network in combination with a depletion-mode transistor, which can be used to adjust the threshold voltage. This makes it suitable for battery-powered circuits, low-noise amplifiers, logic level translators and CMOS logic switching.

BSS138_L99Z features an integrated body diode. The body diode, or body-drain diode, is an intrinsic diode formed between the MOSFET drain and source pins, and provides a low forward voltage drop. The device is able to support high pulse currents, making it suitable for applications requiring a high switching speed.

In summary, BSS138_L99Z is a single-gate MOSFET family, that offers low source-drain capacitance and integrated body diode. It is suitable for applications requiring low power consumption, such as low noise amplifiers, battery-powered circuits and low voltage systems. Its adjustable threshold voltage makes it suitable for operation in CMOS logic switching and logic level translators. Its double-diffused dopant process provides higher switching speeds and lower power dissipation.

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