Allicdata Part #: | BSS123E6433-ND |
Manufacturer Part#: |
BSS123 E6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 170MA SOT-23 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS123 E6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.67nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 69pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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BSS123 E6433 Application Field and Working Principle
As a silicon N-Channel MOSFET transistor, BSS123 E6433 has wide range of applications. It can be used in various circuits, from low-power analog circuits to high-performance power circuits.
Application Field
BSS123 E6433 can be used in motor control, lighting dimming, home appliance control, LCD display/switch mode backlight, modulation of power factor correction, etc.
In motor control, it can be used in the circuits like voltage regulator and pulse-width modulation (PWM) inverter. In lighting dimming, PWM can be used to adjust the brightness of LED light, while re-timing can be used in home appliance control. Motor control, switching DC/AC and LEDs are applications of frequency modulation, while signal conditioning of light/pressure/heat sensors employ AC signal conditioning.
Working Principle
BSS123 E6433 is an enhancement-mode of MOSFET transistor, which works under the principle of creating an insulated layer at the P-type silicon substrate. The metallic gate contact will form an electrical field when voltage is applied and modulate the resistance of the P-type silicon. This type of transistor does not require base current to operate and is designed for carrying high current at low voltage.
BSS123 E6433 also has good thermal properties. It is designed for high junction temperature operation, thus providing excellent reliability over its operation. The device is constructed using ultra-thin silicon-on-insulator (SOI) technology, allowing the device to handle higher current density with lower on-die resistance compared to its thicker counterpart.
In power source application, BSS123 E6433 has low on-resistance and fast gate-source turn-off time. This make it suitable for power circuits application like voltage regulators and switch-mode power supplies. This type of MOSFET also has high efficiency since it has low total gate charge, thus consuming less power when switching at high frequencies.
In conclusion, BSS123 E6433 is a silicon N-Channel MOSFET transistor that has wide range application from analog circuits to power circuits. It is designed for low voltage and high current operation with excellent thermal and electrical properties. This type of MOSFET also consumes less power when used for fast frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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