Allicdata Part #: | BSS119E6433-ND |
Manufacturer Part#: |
BSS119 E6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 170MA SOT-23 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS119 E6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.5nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 78pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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BSS119 E6433 is a type of transistor device used for various electronic applications. It is part of a family of transistors known as field-effect transistors (FETs). They are commonly used in high-frequency applications, such as switching in computers and other electronic circuits. In particular, BSS119 E6433 is a single-gate FET with a P-channel design.
FETs are semiconductor devices made up of three terminals: the gate, the source and the drain. These devices work by controlling the current that flows from the source to the drain by modulating the voltage to the gate. A capacitor is used to separate the gate voltage from the source and drain voltages. The current flow is thus controlled by the capacitance between the gate and the metal plate.
With a traditional metal-oxide-semiconductor-field-effect-transistor (MOSFET), the gate is used to control the current passing through the drain and source. A MOSFET is composed of a metal oxide layer sandwiched between the source and drain. When an voltage is applied to the gate, the oxide layer modulates the amount of current coming from or going to the drain and the source. This is done by changing whether the oxide layer acts as an insulator or as a conductor.
The BSS119 E6433 is a single-gate FET, meaning that it has only one gate that is used to control the current passing through the source and the drain. The device works by controlling the voltage applied to the gate to adjust the strength of conduction between the source and the drain. This can be done by either increasing or decreasing the voltage applied to the gate. By controlling the voltage, the device can be used to switch or amplify signals.
The main application of the BSS119 E6433 is in high-frequency switching applications, such as in computers and other electronic circuits. In these circuits, the FET can be used to control the current passing through the source and the drain, allowing for fast switching of bits or data signals. The device can also be used to amplify signals, as it can control the amount of current passing through the device, allowing for greater control and stronger signals.
The BSS119 E6433 is a type of transistor device used widely in various electronic applications. It is a single-gate FET with a P-channel design, which allows it to be used for high-frequency switching applications and signal amplification. The device works by controlling the voltage applied to the gate, allowing for the modulation of the current passing through the device from the source to the drain.
The specific data is subject to PDF, and the above content is for reference
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