Allicdata Part #: | BSS138NE6433-ND |
Manufacturer Part#: |
BSS138N E6433 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 60V 230MA SOT-23 |
More Detail: | N-Channel 60V 230mA (Ta) 360mW (Ta) Surface Mount ... |
DataSheet: | BSS138N E6433 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 230mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 230mA, 10V |
Vgs(th) (Max) @ Id: | 1.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.4nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 41pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS138N E6433 is a single-polysilicon N-channel enhancement mode MOS transistor, with a low on-resistance value and a low gate threshold voltage. It is used in a variety of applications, such as switching and amplifying circuits, in digital and analog signal conditioning, motor control circuits, and other related products. In this article, we will discuss the application field and working principle of the BSS138N E6433 MOS transistor.
The BSS138N E6433 MOS transistor can be used in a variety of applications, such as signal conditioning, motor control circuits, switching and amplifying circuits, and other similar products. In signal conditioning applications, the device is used to convert analog signals into digital signals. It is also used to filter out unwanted signals, reduce noise, and amplify signals. This is done by controlling the flows of electrons between the source and drain, which can be varied by changing the voltage applied to the gate. In motor control and switching circuits, the device is used to regulate the speed and flow of current, as well as switching between loads. The BSS138N E6433 MOS transistor is also commonly used in amplifying circuits, as it is able to increase the magnitude of an input signal.
The working principle of the BSS138N E6433 MOS transistor relies on its ability to control the flow of electrons between the source and drain when a voltage is applied to its gate. The flow of electrons is dependent on the resistance of the channel between the source and drain, which is determined by the voltage applied to the gate. This can be thought of as a "switch" that is used to control the flow of electrons, enabling the device to act as an amplifier or filter for signals. When the voltage applied to the gate is increased, the resistance of the channel decreases, allowing more electrons to flow, and vice versa. This effectively allows for the device to act as a switch, which can be used to regulate the speed and flow of current, filter out unwanted signals, and amplify signals.
The BSS138N E6433 single-polysilicon N-channel enhancement mode MOS transistor is an ideal choice for applications that require high performance, low on-resistance, and low threshold voltage. It is used in a variety of applications, such as signal conditioning, motor control circuits, switching and amplifying circuits, and other similar products. The device is used to control the flow of electrons between the source and drain, thus allowing it to act as a switch, amplifier, or filter. Working of the device relies on the voltage applied to the gate being varied, which in turn changes the resistance of the channel, allowing more or fewer electrons to flow.
The specific data is subject to PDF, and the above content is for reference
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