BSS159NL6327HTSA1

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BSS159NL6327HTSA1 Application Field and Working Principle

The BSS159NL6327HTSA1 is a N-channel enhancement mode vertical DMOS power transistor which belongs to a vertical MOSFET family. This transistor was developed using advanced and superior planar technology.

Application Field

BSS159NL6327HTSA1 is mainly used for DC-DC converters for computing, networking, motor control, display, telecommunications and consumer electronics. It can also be used as an enhancement mode switch in solenoid and relay drivers, low voltage motor drives, actuators and valves. All these applications need low voltage drive, high current switch and a fast response time.

Working Principle

Working principle of BSS159NL6327HTSA1 N-channel enhancement mode vertical DMOS power transistor includes four terminals which are the source, drain, body and gate. The source and drain terminals serve as the input and output of the transistor, respectively. The body terminal is connected to the substrates and then to the source terminal. The gate terminal is used to trigger the transistor to turn on/off in order to allow current flow through the channel. When source and drain terminals are connected with a DC power source, if the gate terminal is pulsed with a high voltage, the charge carriers present in the channel control the current flow between the source and drain terminals, leading to transistor operation.

The channel of the transistor is formed by applying a reverse biased voltage between source and drain terminals, which results in an induced channel region. The V_GS (gate-source voltage) is then used to control the channel where positive voltage (more than the threshold voltage) on the gate terminal controls the transistor to turn on and a negative voltage on the gate terminal shuts off the current flow between the source and drain terminals. Thus, when the differential voltage across the source and drain regions exceeds the value of threshold voltage, conducting channel is created and the current flows through it.

BSS159NL6327HTSA1 is a vertical DMOS power transistor, which means that the positive gate-source voltage will create a vertical channel of depleted conductive (negative) charge carriers in a region between the source and drain. Also, the current is controlled by the body region, which is connected to the source and then to the gate. This body region works like a damper and helps in controlling the increase/decrease of current in the channel by controlling the flow of charge carriers.

BSS159NL6327HTSA1 is an enhancement mode vertical DMOS power transistor which means that it requires a gate voltage of more than the threshold voltage (V_GS) in order to produce transconductance and turn on the device. This device has high packing density which means there is no need for an additional packaging as the gate and body of the transistor is connected directly to the source.

Conclusion

BSS159NL6327HTSA1 is a N-channel enhancement mode vertical DMOS power transistor which is mainly used for DC-DC converters for computing, networking, motor control, display, telecommunications and consumer electronics. Its working principle includes the four terminals which are the source, drain, body and gate. It requires a gate voltage of more than the threshold voltage (V_GS) in order to produce transconductance and turn on the device. It has high packing density which means there is no need for an additional packaging as the gate and body of the transistor is connected directly to the source.

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