BSS100 Allicdata Electronics
Allicdata Part #:

BSS100-ND

Manufacturer Part#:

BSS100

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 100V 220MA TO92
More Detail: N-Channel 100V 220mA (Ta) Through Hole TO-92-3
DataSheet: BSS100 datasheetBSS100 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 6 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
FET Feature: --
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description

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BSS100 is a relatively new type of field-effect transistor (FET) widely used in the electronics industry. It is a single-gate power switch with a very low on-resistance, high switching speed, and very low gate-source capacitance. It is typically used in power supplies, RF amplifiers, and high-frequency circuits, where its unique combination of characteristics makes it ideal.

The BSS100 FET consists of three terminals: the gate (G), the drain (D), and the source (S). It is a voltage-controlled device, which means it is operated by the voltage applied to its gate. To turn the device on, a positive voltage is applied to the gate; to turn it off, the voltage is removed. The BSS100 is inherently symmetrical; therefore, the same principle applies regardless of the polarity of the voltage.

The BSS100 is a two-terminal voltage-controlled device. The gate and drain terminals act as the input and output, respectively. The source terminal is internally connected to the drain, so there is no need for a separate source connection. The BSS100 operates by controlling the flow of current between the drain and source terminals with the voltage applied to the gate.

The working principle of the BSS100 is based on the phenomenon known as the channel-effect. This occurs when a voltage or electric field is applied to a semiconductor material. The electrons in the material become displaced, creating an electron-rich channel between the source and drain terminals. This results in a reduction of resistance between the source and drain, allowing current to flow. By adjusting the gate voltage, the size of the channel can be varied, thus controlling the amount of current flowing through the device.

The BSS100 has a number of advantages over other types of FETs. It has a very low on-resistance, allowing it to handle high currents efficiently. It is also very fast switching, with a minimum switching time of 4ns. Finally, it has a very low gate-source capacitance, which reduces the effect of noise and reduces power dissipation.

The BSS100 is increasingly becoming popular in many applications, due to its unique combination of characteristics. It is commonly used in power supplies, RF amplifiers, and high-frequency circuits, where its superior performance makes it ideal. It is also ideal for use in harsh environments, where its high switching speed and low gate-source capacitance are essential.

In conclusion, the BSS100 FET is a relatively new type of field-effect transistor widely used in the electronics industry. It has a very low on-resistance, high switching speed, and low gate-source capacitance, making it ideal for a range of applications. It is increasingly becoming popular due to its superior performance and reliability. With its high performance and flexible design, the BSS100 is set to revolutionize the electronics industry.

The specific data is subject to PDF, and the above content is for reference

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