Allicdata Part #: | BSS100-ND |
Manufacturer Part#: |
BSS100 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 220MA TO92 |
More Detail: | N-Channel 100V 220mA (Ta) Through Hole TO-92-3 |
DataSheet: | BSS100 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 220mA (Ta) |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 220mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
FET Feature: | -- |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
BSS100 is a relatively new type of field-effect transistor (FET) widely used in the electronics industry. It is a single-gate power switch with a very low on-resistance, high switching speed, and very low gate-source capacitance. It is typically used in power supplies, RF amplifiers, and high-frequency circuits, where its unique combination of characteristics makes it ideal.
The BSS100 FET consists of three terminals: the gate (G), the drain (D), and the source (S). It is a voltage-controlled device, which means it is operated by the voltage applied to its gate. To turn the device on, a positive voltage is applied to the gate; to turn it off, the voltage is removed. The BSS100 is inherently symmetrical; therefore, the same principle applies regardless of the polarity of the voltage.
The BSS100 is a two-terminal voltage-controlled device. The gate and drain terminals act as the input and output, respectively. The source terminal is internally connected to the drain, so there is no need for a separate source connection. The BSS100 operates by controlling the flow of current between the drain and source terminals with the voltage applied to the gate.
The working principle of the BSS100 is based on the phenomenon known as the channel-effect. This occurs when a voltage or electric field is applied to a semiconductor material. The electrons in the material become displaced, creating an electron-rich channel between the source and drain terminals. This results in a reduction of resistance between the source and drain, allowing current to flow. By adjusting the gate voltage, the size of the channel can be varied, thus controlling the amount of current flowing through the device.
The BSS100 has a number of advantages over other types of FETs. It has a very low on-resistance, allowing it to handle high currents efficiently. It is also very fast switching, with a minimum switching time of 4ns. Finally, it has a very low gate-source capacitance, which reduces the effect of noise and reduces power dissipation.
The BSS100 is increasingly becoming popular in many applications, due to its unique combination of characteristics. It is commonly used in power supplies, RF amplifiers, and high-frequency circuits, where its superior performance makes it ideal. It is also ideal for use in harsh environments, where its high switching speed and low gate-source capacitance are essential.
In conclusion, the BSS100 FET is a relatively new type of field-effect transistor widely used in the electronics industry. It has a very low on-resistance, high switching speed, and low gate-source capacitance, making it ideal for a range of applications. It is increasingly becoming popular due to its superior performance and reliability. With its high performance and flexible design, the BSS100 is set to revolutionize the electronics industry.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
BSS131L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 240V .11A SOT... |
BSS119L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS126L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS126L6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS127L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS138NL6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS138W L6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 280MA SOT... |
BSS138W L6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 280MA SOT... |
BSS139L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS139L6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
BSS159NL6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS169L6327HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS123L6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS159NL6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS169L6906HTSA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138-D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 0.22A SOT... |
BSS138Q-7-F | Diodes Incor... | 0.04 $ | 1000 | MOSFET N-CH 50V 0.2A SOT2... |
BSS119L6433HTMA1 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS100 | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 220MA TO... |
BSS110 | ON Semicondu... | 0.0 $ | 1000 | MOSFET P-CH 50V 170MA TO9... |
BSS138_L99Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 50V 220MA SOT... |
BSS123_D87Z | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS123ATC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS123TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS138TC | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 50V 0.2A SOT2... |
BSS192PE6327T | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 250V 0.19A SO... |
BSS119 E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS119 E7796 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS119 E7978 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS123 E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS123L7874XT | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 100V 170MA SO... |
BSS126 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS126 E6906 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS127 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 600V 0.021A S... |
BSS138N E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS138N E6908 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS138N E7854 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS138N E8004 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 230MA SOT... |
BSS138W E6433 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 60V 280MA SOT... |
BSS139 E6327 | Infineon Tec... | 0.0 $ | 1000 | MOSFET N-CH 250V 100MA SO... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...