BSS123ATC Allicdata Electronics
Allicdata Part #:

BSS123ATC-ND

Manufacturer Part#:

BSS123ATC

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 100V 170MA SOT23-3
More Detail: N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount...
DataSheet: BSS123ATC datasheetBSS123ATC Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 360mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 25V
Vgs (Max): ±20V
Series: --
Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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BSS123ATC is a widely used transistor in the electronics industry. It is a type of field-effect transistor (FET) and is a single MOSFET, specifically known as a Metal-Oxide Semiconductor FET (MOSFET). It is widely used in various electronics applications and offers an excellent combination of power, stability, and reliability.

Application

BSS123ATC is mainly used in audio amplifiers, power supplies, and oscillators. It is also used in a variety of other application circuits including driver circuits, voltage regulators, and fan speed controllers. Additionally, the BSS123ATC is popular in switching power supplies, automotive control systems, and industrial control systems. These transistors are ideal for high-frequency switching and low-noise amplifiers.

Working Principle

A MOSFET consists of a three-terminal device with a metal oxide Hall effect layer and an insulated Gate terminal, which controls the Drain-Source current. The metal oxide Hall effect layer is formed when the voltage is applied between the Gate and Source. When an input voltage is applied to the Gate terminal, the charge carriers are drawn in and an electric field is generated between the gate and the Source. This electric field attracts and accumulates charge carriers, making it easier for electrons to flow from the Drain to the Source.

The operation of the BSS123ATC can be analyzed according to the following equation.

VDS(VGS -Vth)IDS = IDS(sat)(VGS -VGS(th))

Where VDS : Drain-Source voltage
VGS : Gate-Source voltage
Vth : Threshold voltage
IDS : Drain-Source current
IDS(sat) : Saturation current
VGS(th) : Threshold voltage

The BSS123ATC operates in three ways: cut-off, saturation, and linear operation. When the Gate-Source voltage is below the threshold voltage, the transistor operates in cut-off mode, where the Drain-Source current is as close to zero as possible. When the Gate-Source voltage is above the threshold voltage, the drain to source current starts to rise, and the transistor enters the saturation region. The maximum drain-source current is the saturation current, and no further increase in drain-source current is possible. When the Gate-Source voltage is between the threshold voltage and the saturation voltage, the transistor operates in the linear operation region. In this region, the drain-source current is proportional to the Gate-Source voltage.

The BSS123ATC is an excellent choice for a variety of analog and digital applications that require reliable operation and superior switching performance. It is highly reliable, and its performance is unaffected by temperature variations. Additionally, it has an extended temperature range, making it suitable for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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