BSS138-D87Z

Gate Charge (Qg) (Max) @ Vgs:	2.4nC @ 10V
Base Part Number:	BSS138
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	27pF @ 25V
Vgs (Max):	±20V
Series:	--
Vgs(th) (Max) @ Id:	1.5V @ 1mA
Rds On (Max) @ Id, Vgs:	3.5 Ohm @ 220mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	220mA (Ta)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Cut Tape (CT)

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BSS138-D87Z Application Field and Working Principle

Transistors are electronic components that transmit and control electronic signals. Field-effect transistors (FETs) are one of the most common transistors in the electronics industry. Compared with bipolar transistors, FETs have a simpler structure and can be connected in a variety of ways. Today, let\'s look at the BSS138-D87Z transistor and its application fields and working principles.The BSS138-D87Z is a low voltage, low current, p-channel enhancement-type field-effect transistor. This type of transistor is suitable for various portable electronic devices. When used in these devices, it helps improve power efficiency and reduce energy consumption.

Structure and Internal Circuit

The BSS138-D87Z has a drain-source breakdown voltage of 20V and a maximum drain current of 200mA. It also has a maximum gate-source voltage of 10V and a maximum gate-source current of 1mA. The BSS138-D87Z is composed of a source, a drain, a gate and a passivation layer. The passivation layer is used to protect the delicate parts of the transistor from outside interference, and the three terminals are connected through the internal connection structure.

Working Principle

Using negative gate bias movement, the BSS138-D87Z forms a low impedance channel between the source and the drain. When a negative gate voltage is applied, the electric field in the channel shrinks, so that no current can pass through the channel. This completes the off-state of the transistor. When a positive gate voltage is applied, the electric field extends, and the current can pass through the channel. This completes the on-state of the transistor.

Application Fields

Due to its low voltage, low current, and high gate source voltage characteristics, the BSS138-D87Z is commonly used in portable electronic devices such as mobile phones and digital cameras. In addition, it can also be used in signal mixing, signal routing, and pulse shaping circuits.

Conclusion

The BSS138-D87Z is a low voltage and low current p-channel enhancement-type field-effect transistor. It is suitable for use in a variety of portable electronic devices, signal mixing, signal routing, and pulse shaping circuits. The device is composed of a source, a drain, a gate, and a passivation layer, which are connected through the internal structure. It uses a negative gate bias movement to form a low impedance channel between the source and the drain. When the electric field in the channel shrinks, no current can pass through the channel and the off-state is complete. When the electric field expands, the current can pass through the channel and the on-state is complete. With its wide range of application fields, the BSS138-D87Z is an ideal component for various electronic circuits.

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