Allicdata Part #: | BSS169L6327HTSA1TR-ND |
Manufacturer Part#: |
BSS169L6327HTSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 100V 170MA SOT-23 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS169L6327HTSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 170mA, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 2.8nC @ 7V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 68pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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BSS169L6327HTSA1 is a single N-Channel MOSFET, part of a series of similar MOSFETs developed by Vishay Semiconductors. It offers an improved balance of on-state resistance, gate charge, and body diode performance compared to previous generations of MOSFETs. Some of its key features are an operating drain current of up to 200mA, a drain-source breakdown voltage of 6V, and a gate threshold voltage of 4V.
The unique electrical characteristics of MOSFETs make them useful in a variety of applications, such as switching power supplies, electric motors and UPS systems. This particular MOSFET is specially designed for use in low noise, low power and high digital loading applications, including power amplifiers and switching regulators.
As a basic semiconductor device, MOSFETs are a form of transistor composed of four layers, comprising of a source, a drain, and two insulators, known as a gate oxide and a body oxide. A voltage applied to the source and drain will create an electric field, which will induce a charge flow between these two terminals. By controlling the application of a voltage to the gate, the voltage applied to the source and drain can be controlled, thus turning the device on and off. As a result, MOSFETs are commonly used as switches, allowing electric signals to be switched on and off, allowing them to be used in circuits such as logic gates, amplifiers, and power management systems.
The BSS169L6327HTSA1 MOSFET is designed for use in applications where low noise and low power digital loading is required. Its low on-state resistance and gate charge, combined with its low body diode characteristics, make it ideal for those applications. Additionally, its small surface-mount package makes it easy to incorporate into all types of circuit boards.
As one of the most commonly used MOSFETs, the BSS169L6327HTSA1 is a versatile and useful tool that can be applied to a wide variety of circuit designs. Its small size and low power consumption make it ideal for low noise, low power digital loading applications, while its low on-state resistance and gate charge make it a good choice for amplifiers, switching regulators, and UPS systems.
The specific data is subject to PDF, and the above content is for reference
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