Allicdata Part #: | BSS139E6327-ND |
Manufacturer Part#: |
BSS139 E6327 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 250V 100MA SOT-23 |
More Detail: | N-Channel 250V 100mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS139 E6327 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | SIPMOS® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250V |
Current - Continuous Drain (Id) @ 25°C: | 100mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 0V, 10V |
Rds On (Max) @ Id, Vgs: | 14 Ohm @ 0.1mA, 10V |
Vgs(th) (Max) @ Id: | 1V @ 56µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.5nC @ 5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 76pF @ 25V |
FET Feature: | Depletion Mode |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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The BSS139 E6327 is an N-channel enhancement mode high performance transistor. It is an ideal choice for low voltage, low current and low power applications. The BSS139 E6327 is designed to provide excellent off-state low leakage and high Vgs(th) with a low gate threshold voltage. It is a versatile device and can be used in a variety of applications including switch, amplifier, regulator, and inverter/oscillator circuits.
The BSS139 E6327 is a type of field-effect transistor (FET) and is classified as a single-gate device. The gate terminal is responsible for controlling the current from the source to the drain terminal. The two terminals that are not connected to the gate are the source and drain terminals. The source terminal is usually connected to the negative voltage rail while the drain terminal is connected to the positive voltage rail. When an electric potential is applied to the gate of the transistor, a channel is opened between the source and drain terminals, allowing current to flow through.
The BSS139 E6327 is composed of a N-channel MOSFET. The “N-channel” indicates that the channel is formed when negative charges are induced in the channel region. The “MOSFET” stands for metal-oxide-silicon field effect transistor, which consists of a source and drain connected through a channel region of semiconductor material. The semiconductor material can be either P-type or N-type material. MOSFETs are preferred for their higher performance and low power consumption.
The working principle of the BSS139 E6327 is based on the “field effect”. In an FET, when a positive or negative voltage is applied to the gate terminal, the electric field produced around the gate terminal attracts or repels electrons, either increasing or decreasing the conductivity between the source and drain. As the voltage is increased, the conductivity in the channel increases, resulting in an increase in the current flowing between the source and drain.
The BSS139 E6327 has many applications. It can be used in a variety of applications such as amplifiers, regulators, switches, inverters, and oscillators. In addition, it is commonly used in a variety of consumer and commercial electronics such as cell phones, televisions, computers, and other consumer electronics. It is also often used in automotive and industrial applications.
The BSS139 E6327 is a versatile and reliable device that can be used in a variety of consumer and commercial electronic applications. Its high performance and low power consumption make it an ideal choice for a variety of applications. It is able to provide an excellent off-state low leakage and high Vgs(th) with a low gate threshold voltage, making it a reliable and versatile device for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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