Allicdata Part #: | BSS123TC-ND |
Manufacturer Part#: |
BSS123TC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 170MA SOT23-3 |
More Detail: | N-Channel 100V 170mA (Ta) 360mW (Ta) Surface Mount... |
DataSheet: | BSS123TC Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 170mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 20pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-23-3 |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
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BSS123TC is a type of field effect transistor (FET) which utilizes junction field-effect transistor (JFET) technology. It is a high-voltage and low-power device typically used in digital logic and switching applications. It has an operating voltage rating of up to 250V and a power dissipation of up to 1W. Compared to other FET technologies, BSS123TC offers improved gain and lower leakage current, making it ideal for applications where power consumption is critical.
The BSS123TC FET is constructed with a N-type source and drain region and a P-type reverse-biased gate region. This FET technology utilizes a depletion region, which creates a high-resistance barrier between source and drain. The reverse-biased gate voltage controls the current flowing through the channel by modulating the width of the depletion region between the source and drain regions.
The BSS123TC FET operates in three distinct modes of operation. It functions as an enhancement mode FET when a positive voltage is applied to the gate. This allows current to flow between the source and drain regions, allowing the FET to act as a switch. Secondly, the FET operates in the depletion mode when a negative voltage is applied to the gate. This creates a depletion layer between the source and drain, which reduces the current flow. Finally, the FET may also operate in a linear mode, allowing it to be used as an amplifier.
The BSS123TC FET is an ideal component for many digital logic and switching applications. Its high-voltage rating and low power consumption make it an attractive choice for many industries, including automotive, security, and medical electronics. It is also suitable for use in alternative energy applications, such as solar and fuel cell systems. In addition, the FET also has a wide range of applications in telecommunications, audio, and video electronics.
The BSS123TC FET is an important component for many modern electronic devices. Its wide range of operational modes and continual improvement in performance make it a valuable component for many applications. With its high-voltage rating and low-power dissipation, it is an ideal component for digital logic and switching applications in the automotive, medical, and alternative energy industries.
The specific data is subject to PDF, and the above content is for reference
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