BSS138N E8004

Vgs(th) (Max) @ Id:	1.4V @ 250µA
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	360mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	41pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	1.4nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	3.5 Ohm @ 230mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	230mA (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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The BSS138N E8004 is an N-Channel enhancement mode field-effect transistor (FET) that allows for higher current handling and higher power dissipation. It is a monolithic device with a P-channel and N-channel MOSFET integrated on the same die, providing efficient power conversion for high power applications. The device has a very low on-state resistance, making it ideal for switching applications.The BSS138N E8004 is a single monolithic N-channel enhancement mode MOSFET. It is a 40V device with an RDS(ON) of 0.510Ω. The device has a maximum current handling capacity of 50A and a maximum power dissipation of 2.0W. It features a low gate threshold voltage and low on-state resistance, making it ideal for switching applications.The BSS138N E8004 can be used in a variety of applications. It is ideal for use in power management designs, providing efficient power conversion for high power applications. It can also be used in power supply circuitry, as well as motor control and inverter systems. Additionally, it can be used in battery chargers, DC/DC converters, power line filters, and AC/DC power converters.The working principle of the BSS138N E8004 is based on the fact that when a voltage is applied to the gate of an enhancement-mode MOSFET, charge accumulates at the gate-to-source region, causing an electric field that creates a depletion layer in the channel. This depletion layer acts as an electric switch, allowing current to flow between the source and the drain when the gate voltage is greater than the threshold voltage. When the gate voltage is less than the threshold voltage, the depletion layer is eliminated and the device is turned off.The BSS138N E8004 is able to achieve higher current handling and higher power dissipation than other N-channel enhancement mode MOSFETs due to its design. It has a greater gate capacitance, which allows for greater charge accumulation. Additionally, its low RDS(ON) enables it to maintain high current efficiency and high power dissipation over a wide range of gate voltages.In conclusion, the BSS138N E8004 is an N-Channel enhancement mode FET with a monolithic design and a high current handling capacity. It is ideal for use in power management designs, power supply circuitry, motor control and inverter systems, as well as battery chargers, DC/DC converters, power line filters, and AC/DC power converters. It works by allowing a current to flow between the source and the drain when a voltage is applied to the gate, creating a depletion layer in the channel. It has a low gate threshold voltage and a low RDS(ON), enabling it to maintain a high current efficiency and high power dissipation over a wide range of gate voltages.

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