BSS138Q-7-F Allicdata Electronics
Allicdata Part #:

BSS138Q-7-FDITR-ND

Manufacturer Part#:

BSS138Q-7-F

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 50V 0.2A SOT23
More Detail: N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount ...
DataSheet: BSS138Q-7-F datasheetBSS138Q-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.03500
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
FET Feature: --
Power Dissipation (Max): 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Description

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The BSS138Q-7-F is a single P-Channel Field Effect Transistor (FET) that is frequently used in a wide range of applications. This device is manufactured by many semiconductor companies, such as NXP and Rohm. In this article, we will discuss the application fields and working principle of the BSS138Q-7-F.

Description

The BSS138Q-7-F is a high voltage, high speed, N-channel enhancement mode MOSFET. It has an integrated body diode which provides ESD protection and fast switching. The device has low on-state resistance (Ron) and small gate charge (Qg), making it suitable for high speed switching applications.

Application Fields

The BSS138Q-7-F can be used in a variety of power switching applications, including motor control, power management, motor drive and switch mode power supplies. It can also be used in DC-DC converters and LED lighting applications. In addition, it can be used in consumer and portable electronic devices, such as mobile phones and PDAs.

Working Principle

The BSS138Q-7-F is a depletion-mode FET. It has a P-type gate, which is normally connected to the positive voltage supply and a N-type source and drain terminals. The voltage applied to the gate controls the flow of current through the channel from the drain to the source. When a positive voltage is applied to the gate, it attracts electrons from the channel and the current between the drain and the source is blocked. When a negative voltage is applied to the gate, electrons are pushed out of the channel and the drain-source current is allowed to pass through.

The BSS138Q-7-F is designed to operate at higher frequencies than other standard FETs, making it suitable for high speed switching applications. It is also configured with an internal body diode which can help protect against electrostatic discharges.

Conclusion

The BSS138Q-7-F is a single P-Channel FET designed for use in a wide variety of power switching applications. The device has a low on-state resistance and small gate charge, making it suitable for high speed switching applications. It is also configured with an internal body diode which can help protect against electrostatic discharges.

The specific data is subject to PDF, and the above content is for reference

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