| Allicdata Part #: | BSS138Q-7-FDITR-ND |
| Manufacturer Part#: |
BSS138Q-7-F |
| Price: | $ 0.04 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 50V 0.2A SOT23 |
| More Detail: | N-Channel 50V 200mA (Ta) 300mW (Ta) Surface Mount ... |
| DataSheet: | BSS138Q-7-F Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.03500 |
| Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
| Package / Case: | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package: | SOT-23-3 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 300mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50pF @ 10V |
| Vgs (Max): | ±20V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.5 Ohm @ 220mA, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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:The BSS138Q-7-F is a single P-Channel Field Effect Transistor (FET) that is frequently used in a wide range of applications. This device is manufactured by many semiconductor companies, such as NXP and Rohm. In this article, we will discuss the application fields and working principle of the BSS138Q-7-F.
Description
The BSS138Q-7-F is a high voltage, high speed, N-channel enhancement mode MOSFET. It has an integrated body diode which provides ESD protection and fast switching. The device has low on-state resistance (Ron) and small gate charge (Qg), making it suitable for high speed switching applications.
Application Fields
The BSS138Q-7-F can be used in a variety of power switching applications, including motor control, power management, motor drive and switch mode power supplies. It can also be used in DC-DC converters and LED lighting applications. In addition, it can be used in consumer and portable electronic devices, such as mobile phones and PDAs.
Working Principle
The BSS138Q-7-F is a depletion-mode FET. It has a P-type gate, which is normally connected to the positive voltage supply and a N-type source and drain terminals. The voltage applied to the gate controls the flow of current through the channel from the drain to the source. When a positive voltage is applied to the gate, it attracts electrons from the channel and the current between the drain and the source is blocked. When a negative voltage is applied to the gate, electrons are pushed out of the channel and the drain-source current is allowed to pass through.
The BSS138Q-7-F is designed to operate at higher frequencies than other standard FETs, making it suitable for high speed switching applications. It is also configured with an internal body diode which can help protect against electrostatic discharges.
Conclusion
The BSS138Q-7-F is a single P-Channel FET designed for use in a wide variety of power switching applications. The device has a low on-state resistance and small gate charge, making it suitable for high speed switching applications. It is also configured with an internal body diode which can help protect against electrostatic discharges.
The specific data is subject to PDF, and the above content is for reference
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BSS138Q-7-F Datasheet/PDF