BUK714R1-40BT,118 Discrete Semiconductor Products

Rds On (Max) @ Id, Vgs:	4.1 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	83nC @ 10V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6808pF @ 25V
FET Feature:	Temperature Sensing Diode
Power Dissipation (Max):	272W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-426
Package / Case:	TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Series:	TrenchPLUS
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V

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IntroductionBUK714R1-40BT,118 is a cost efficient, high performance MOSFET that is manufactured by NXP Semiconductors. This MOSFET is used in a wide array of applications, ranging from motor control and power switching to industrial applications and renewable energy systems. In order to understand how this particular type of MOSFET functions, it is important to look at the technology behind it, how it operates and the various applications it is useful for. Technology Behind BUK714R1-40BT,118MOSFETs are field-effect transistors that are powered by metal-oxide-semiconductor technology. A MOSFET works by using a gate electrode to control the conductivity of a channel between two source and drain terminals. When voltage is applied to the gate, it creates an electric field that modulates the conductivity of the channel and controls the current flow.The BUK714R1-40BT,118 MOSFET has an added vertical structure which is designed to provide low on-voltage, improved RDSon and higher reliability in applications where switching speed is not a requirement. It is also capable of providing high system integration with up to 4 devices integrated in one package. Working PrincipleThe working principle of the BUK714R1-40BT,118 MOSFET is quite simple. When a voltage is applied to the gate it creates an electric field within the channel, which modulates the conductivity of the channel. Depending on the level of the voltage applied, either a high or low drain-source current will flow.In this particular type of MOSFET, the vertical structure provides low on-voltage and improved RDSon. This means the voltage needed to open up the MOSFET and allow current to flow through it is quite low. This has the advantage of reducing power loss when current is running through the channel, and also improving the reliability of the device in the process.ApplicationsThe BUK714R1-40BT,118 MOSFETs have a wide range of applications, many of which are outlined below: • Motor Control - MOSFETs can be used to control motors, as they are able to modulate current flow quickly and efficiently. The low on-voltage capability of the BUK714R1-40BT,118 MOSFET ensures improved power efficiency and reliability when used for motor control. • Power Control - The MOSFET is also useful in power control applications, as it can provide accurate and reliable control over current at high frequencies. This makes it suitable for applications such as solar controllers and power supplies.• Automotive - The BUK714R1-40BT,118 MOSFET can be used in a wide range of automotive applications, such as motor control and power switching.• Industrial - The low on-voltage capability and improved RDSon of the BUK714R1-40BT,118 MOSFET make it ideal for industrial applications, where it can be used to provide accurate control over current.• Renewable Energy - It can also be used in renewable energy systems, such as solar and wind energy systems, where it can be used to modulate current in order to control energy production.ConclusionThe BUK714R1-40BT,118 MOSFET is a cost-efficient and high performance device that is capable of providing reliable and accurate control over current flow. The addition of a vertical structure allows for low on-voltage and improved RDSon, making it suitable for a wide array of applications. In the future, this type of MOSFET is likely to become even more popular as its capabilities are explored further and used in more advanced technologies.

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