BUK7506-55A,127

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The BUK7506-55A,127 is a single N-channel enhancement mode Field Effect Transistor (FET). Its main application field is in switching power supply and protection circuits where high current is a factor. This transistor has an integrated body diode to protect it from damaging high voltage. And it also provides excellent power dissipation, particularly at high temperatures.

Field-effect transistor (FET) is a transistor that uses an electric field to control the flow of current. It is an unipolar transistor since it has only one kind of charge carrier. FET has three terminals, source, drain and gate. The gate terminal is where the input voltage is applied, and the voltage between the source and the gate determines the resistance between the source and the drain.

A single N-channel enhancement mode FET means the FET\'s conductivity increases when the voltage between the gate and the source is increased. This type of FET uses an N-type semiconductor for its channel (a positive voltage increases the conductivity between the source and the drain). The BUK7506-55A,127 transistor is an N-channel enhancement mode Field Effect Transistor with an integrated body diode to protect it from damaging high voltage.

Generally speaking, a transistor acts like a switch, turning current off and on. Transistors can be used to amplify signals or control high current circuits, and the BUK7506-55A,127 transistor is designed to do both. When voltage is applied to the gate, it creates a conductive pathway between the source and the drain, allowing current to flow. The higher the voltage applied to the gate, the higher the current flow.

When no voltage is applied, the gate is closed, preventing any current from flowing. This is what makes transistors a useful tool for both switching and amplifying circuits. In the case of the BUK7506-55A,127, it can handle a maximum current of 55A and a maximum voltage of 127V, making it suitable for high-current applications such as switch mode power supplies.

The integrated body diode helps protect the FET from damaging high voltage spikes. The diode is connected between the gate and the source of the FET and limits the voltage between the two by clamping the voltage at a set level. This helps protect the FET from the effects of over-voltage and transient voltages.

In summary, the BUK7506-55A,127 is a single N-Channel enhancement mode Field Effect Transistor, designed for use in switching power supplies and protection circuits where high current is a factor. Its integrated body diode helps protect it from damaging high voltage, and its maximum current and voltage ratings make it suitable for high current applications.

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