BUK753R1-40E,127 Allicdata Electronics
Allicdata Part #:

1727-7236-ND

Manufacturer Part#:

BUK753R1-40E,127

Price: $ 0.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 100A TO220AB
More Detail: N-Channel 40V 100A (Tc) 234W (Tc) Through Hole TO-...
DataSheet: BUK753R1-40E,127 datasheetBUK753R1-40E,127 Datasheet/PDF
Quantity: 1000
1000 +: $ 0.63273
Stock 1000Can Ship Immediately
$ 0.7
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 234W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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BUK753R1-40E,127 Application Field and Working Principle

The BUK753R1-40E,127 is a n-channel enhancement mode Field Effect Transistor (FET) that is typically used in switching applications such as voltage regulators, motor control and power converters. The device can also be used in other applications that require high power switching and fast switching speed.

General Specification

Voltage Rating

The BUK753R1-40E,127 has a maximum drain drain voltage of 40V, a maximum gate source voltage of -12V and a Gate Threshold Voltage of 0.9V.

Current Rating

The current ratings for this FET are 5A for D-S (drain-to-source) and 1.0A for G-S (gate-to-source).

Capacitance

This FET has a gate-source capacitance of 28pF, a gate-drain capacitance of 16pF, and a drain-source capacitance of 110pF.

Application

The BUK753R1-40E,127 is typically used in applications such as voltage regulators, motor control, power converters, and other applications that require high power switching and fast switching speed. It can be used as a power switch in high power devices such as power supplies, AC/DC converters, and motor control.

Working Principle

The BUK753R1-40E,127 works by using the principle of the electric field effect to allow current to flow through it when the Gate voltage is increased. When the voltage on the Gate is low, then no current flows from the Drain to Source, since the Electric Field across the channel is not strong enough to break the Drain-Source barrier. When the voltage on the Gate is increased, then sufficient Electric Field is created across the channel to break the barrier and allow current flow from source to drain.

At the same time, an Electric Field is created between the Gate and Source, and this Electric Field prevents further current flow. This is known as the Saturation Region, where the power consumed by the FET is minimized, and it is also the region in which the FET switches fastest. The other region is the Cutoff Region, where the current flow is strongly prevented. The Cutoff Region corresponds to a low Gate voltage.

Conclusion

The BUK753R1-40E,127 is a useful FET for voltage regulators, motor control, power converters, and other power switching applications. It is able to switch fast and consume minimal power, and is capable of handling up to a 40V drain-source voltage and 5A of drain-source current. The device works by using the principle of electric field effect, using an Electric Field across the channel when the Gate voltage is increased, to allow current to flow from the source to the drain, and subsequently using the Electric Field between the Gate and Source to prevent further current flow when in the Saturation Region.

The specific data is subject to PDF, and the above content is for reference

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