BUK7608-55A,118 Allicdata Electronics
Allicdata Part #:

1727-7162-2-ND

Manufacturer Part#:

BUK7608-55A,118

Price: $ 0.70
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 75A D2PAK
More Detail: N-Channel 55V 75A (Tc) 254W (Tc) Surface Mount D2P...
DataSheet: BUK7608-55A,118 datasheetBUK7608-55A,118 Datasheet/PDF
Quantity: 800
800 +: $ 0.63852
Stock 800Can Ship Immediately
$ 0.7
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 254W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4352pF @ 25V
Vgs (Max): ±20V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK7608-55A is a single FET transistor from NXP Semiconductor. It is a high frequency, 75-V p-channel enhancement-mode MOSFET which has fast switching times and low gate leakage currents. It is suitable for a wide range of applications, such as power management, automotive, auxiliary supplies, load switching, DC-DC conversion, and current control.

This device is specifically designed to handle high-frequency applications. It has a low capacitance which helps reduce switching losses and improve system efficiency. It also has a low drain-source on-resistance which minimizes conduction losses. Additionally, its high-frequency performance is enhanced by the uniform thermal characteristics.

The working principle of the BUK7608-55A is very simple. It is a transistor that uses electric power to control its current flow. When a voltage is applied to the gate, the associated channel between the drain and the source is opened. This allows current to flow between the drain and the source. If the voltage applied to the gate is increased, the current flowing through the device is increased.

The BUK7608-55A is mainly used in power management and automotive applications. It can be used to control loads efficiently and to switch between power levels. It can also be used to regulate DC-DC conversion or to control current in various automotive systems. Furthermore, it can also be used to regulate and switch auxiliary power supplies.

In summary, the BUK7608-55A is a single FET transistor from NXP Semiconductor. It is a high frequency, 75-V p-channel enhancement-mode MOSFET which has fast switching times and low gate leakage currents. It is suitable for a wide range of applications, such as power management, automotive, auxiliary supplies, load switching, DC-DC conversion, and current control. The working principle of this device is very simple as it is just a transistor which uses electric power to control its current flow. It is mainly used in power management and automotive applications where it helps to control loads efficiently and switch between power levels.

The specific data is subject to PDF, and the above content is for reference

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