BUK764R2-80E,118 Discrete Semiconductor Products

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The BUK764R2-80E is a single field-effect transistor (FET) mainly used for power management. It belongs to the family of FETs which are designed gate controlled transistors that have an electrical gate to control the current flow from the source to the drain. The main difference between this type of FET and an ordinary transistor is that the FET has no physical gate and instead uses an electrical gate. This means that there is no physical connection between the source and the drain, and the current flow is dependent on the voltage applied to the gate.

The BUK764R2-80E is specifically designed for low-power applications such as power management in industrial, automotive, consumer and medical applications. It is a shallow-trench MOSFET (STMOSFET) which is capable of delivering very low on-state losses and is also suitable for high-efficiency applications. The device has a source-drain breakdown voltage of 80V and a gate to source voltage rating of -55V to +55V.

The BUK764R2-80E is used in power converters and switching applications for controlling power devices such as MOSFETs, IGBTs and BJTs. It is most effective when used as a low impedance switch as it can utilize low gate capacitance and withstand high voltage and transient currents without exceeding voltage limits. The device can also be used for controlling the current flow in multiple devices in parallel for reducing power loss and distribution. When used for power management, the device can be used in combination with a controller chip to control the voltage, current, and power losses.

The BUK764R2-80E has a unique combination of features in its design such as high-speed switching, low gate charge and low on-resistance. This allows it to provide good power efficiency even in heavy-load applications. The device also has an integrated resistor connected between the gate and source which is used to reduce the amount of gate leakage current and reduce the amount of power unwantedly dissipated during switching. Furthermore, the device uses a special thermal pad to improve its thermal performance.

In summary, the BUK764R2-80E is designed for low-power applications such as controlling power devices and reducing power losses. Its features, such as low gate charge and low on-resistance, make it ideal for use in high-efficiency applications. It also has an integrated resistor to reduce gate leakage current, and a special thermal pad to improve thermal performance. As a result, the BUK764R2-80E is a valuable addition to any power electronic circuit in need of improved efficiency and reliability.

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