Allicdata Part #: | 1727-5269-ND |
Manufacturer Part#: |
BUK7E2R3-40C,127 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 100A I2PAK |
More Detail: | N-Channel 40V 100A (Tc) 333W (Tc) Through Hole I2P... |
DataSheet: | BUK7E2R3-40C,127 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.3 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 175nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 11323pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 333W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | I2PAK |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK7E2R3-40C,127 is a single-poled double-throw (SPDT) non-polarized enhanced MOSFET specifically designed for switch and general purposes. This device is both cost effective and reliable due to its low on-state resistance and low gate capacitance. It is able to operate with a minimum on-state voltage of -8 V, making it suitable for a broad range of applications in the industrial, automotive, and consumer markets.
The BUK7E2R3-40C,127 utilizes a method of unipolar (one polarity) MOSFET control which increases its efficiency and power output. This type of device has a P-channel and an N-channel MOSFET arrangement to provide better flexibility in controlling the output. For instance, it can be used to supply logic level currents or DC-DC voltages of up to 60V.
Apart from its low power operation, the BUK7E2R3-40C,127 is also well-suited for creating switch circuits with switching times of around 100ns. A number of protective features also come with this device including temperature and ESD protection as well as overcurrent protection. It provides a reliable switching solution for both low-voltage and high-voltage applications.
The working principle of the BUK7E2R3-40C,127 is based on the basic principle of unipolar MOSFET operation. This type of device works by creating an electric field between the N-channel and the P-channel when a gate voltage is applied to the gate terminal. When the applied gate voltage is greater than the threshold voltage, the electrons in the N-channel are repelled and the P-channel is attracted, leading to current flowing through the device. This process is then reversed once the gate voltage is removed.
The BUK7E2R3-40C,127 finds a wide range of applications in the industrial, automotive, and consumer markets. It is particularly suitable for switching circuits due to its low power characteristics and small switching times. This device is also well-suited for low-voltage and high-voltage applications such as motor control, inverter sensing, portable power supplies, and battery chargers.
In addition, the BUK7E2R3-40C,127 is also popular for its protective features, which offer users a reliable switching solution for both low-voltage and high-voltage. Its temperature and ESD protection help to protect the device against harsh environments, while its overcurrent protection not only prevents damage to the device but also reduces energy loss from overcurrents.
The specific data is subject to PDF, and the above content is for reference
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