BUK7E3R5-60E,127

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	293W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	8920pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	114nC @ 10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	3.5 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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Introduction

BUK7E3R5-60E is an N-channel power MOS field-effect transistor (MOSFET). It has superior switching characteristics, especially for power-switching applications. Specifically, BUK7E3R5-60E is a single device with a maximum drain-source voltage of 60 V, a drain current of 18 A and a power dissipation of 8 W. This article will discuss the application field and working principle of the BUK7E3R5-60E.

Application Field

BUK7E3R5-60E is suitable for applications such as LED drivers, motor drives, power switches and power supplies. It has a wide operating temperature range of -55°C to 175°C, and is suitable for extremely challenging temperature environments. Furthermore, its low on-state resistance allows it to switch high currents with low voltage drops. It is also appropriate for battery-powered applications due to its relatively low operating current and wide operating voltage range. It is also suitable for AC-powered applications, thanks to its high surge current capabilities.

Working Principle

BUK7E3R5-60E works by controlling electrical current between a source of voltage (S) and a load (or drain). The flow of current is controlled by a gate voltage. When the gate voltage is higher than the source voltage, the MOSFET is ‘on’ and current flows through the drain and the source. When the gate voltage is lower than the source voltage, the transistor is ‘off’ and there is no current flow. As a general rule, a MOSFET has a higher gate-source voltage threshold (Vgs) than an insulated gate bipolar transistor (IGBT). This means that a higher gate-source voltage is required to turn the MOSFET on. A MOSFET typically has a higher source-drain resistance when it is off and a lower source-drain resistance when it is on.

Conclusion

BUK7E3R5-60E is an N-channel power MOS field-effect transistor (MOSFET) that is suitable for LED drivers, motor drives, power switches and power supplies. It has a wide operating temperature range and can handle high currents with low voltage drops. Working principle of this MOSFET is, when the gate voltage is higher than the source voltage, the transistor is ‘on’ and current flows through the drain and the source, when the gate voltage is lower than the source voltage, the transistor is ‘off’ and there is no current flow.

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