BUK7M27-80EX

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The BUK7M27-80EX is a single N-channel power MOSFET from Nexperia. It has a breakdown voltage (VBR) of 800 V, a continuous drain current (ID) of 27 A, and a total gate charge (Qg) of 22.3 nC. The device is suited for applications such as switch mode power supplies (SMPS), motor control, and telecom power.

I. Overview

The BUK7M27-80EX is a single N-channel enhancement-mode power MOSFET. It offers an excellent combination of high current handling capability with low on-state resistance. The package is designed for easy and cost-efficient mounting, making it a suitable choice for high-current power applications. The device features drain-source ON-resistance (RDS ON) of 0.0074 ohm and is rated for a maximum power dissipation (PDM) of 221 W, making it able to handle large currents and high power. The device is AEC-Q101 qualified.

II. Applications

The BUK7M27-80EX is a versatile device and has a wide range of applications, including but not limited to switch mode power supplies, motor control, and telecom power. Its low on-state resistance, high current handling capability, and robust package make it ideal for these applications. It is also suitable for lighting and audio equipment, battery chargers and UPS systems, air conditioning, solar inverters, and other power electronic applications.

III. Working Principle

The BUK7M27-80EX is an enhancement-mode MOSFET, which means the channel conducts when the gate voltage is greater than the source voltage. When the gate-source voltage is increased, the channel is made to become narrower, which in turn reduces the drain-source resistance, allowing more current to flow. The device also features diode reverse recovery (dV/dt) protection and is designed to work with either continuous or pulsed gate signals.

When the source voltage is greater than the gate voltage, the gate-source voltage is no longer able to control the channel and the device enters the OFF-state. The device is then said to be OFF since no current flows through the drain-source junction. When the gate voltage is lowered below the source voltage, the device also turns OFF.

IV. Conclusion

The BUK7M27-80EX is a single N-channel enhancement-mode power MOSFET from Nexperia. It offers an excellent combination of high current handling capability with low on-state resistance, making it ideal for switch mode power supplies, motor control, and telecom power applications. The device is also robust and is rated for a maximum power dissipation of 221 W. Its working principle is based on the gate voltage controlling the channel, allowing for more current to flow when the gate-source voltage is increased.

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