BUK7M8R0-40EX Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	SOT-1210, 8-LFPAK33
Supplier Device Package:	LFPAK33
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	75W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1567pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	23.8nC @ 10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	69A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BUK7M8R0-40EX Application Field and Working Principle

Introduction

The BUK7M8R0-40EX is a power MOSFET produced by Infineon Technologies AG. It is one of the products belonging to the CoolMOS C7 series which are suitable for high performance switch mode power supply applications. This device is housed in a small TO-220 package providing low conduction losses and advantages in thermal performance. The BUK7M8R0-40EX is capable of conducting peak current of up to 57A. This feature and its wide gate threshold voltage range make the device the ideal solution for designing efficient, low power SMPS applications such as industrial applications and mobile computing equipment.

Application Field

The BUK7M8R0-40EX is a power MOSFET specifically designed for heavy switching applications and can be found in various industries such as industrial motor control and LED lighting systems. The device is also ideal for applications that require high efficiency and low power loss. This makes the MOSFET suitable for application in mobile computing equipment such as laptops and smart phones. Its low on resistance also makes it an excellent choice for power supplies and other power conversion applications such as DC/DC power conversion.

Working Principle

The BUK7M8R0-40EX is based on the principle of insulated-gate field-effect transistor (IGFET) and works on the principle of a voltage-controlled current source. It consists of three layers of N-type and P-type silicon semiconductor material. The device features a high voltage anti-parallel diode.At the heart of the device is a dielectric layer which isolates the control gate from the source and drain regions. This layer is made of a very thin layer of SiO2 (silicon dioxide) which has a very high surface resistivity, thus making it able to resist current.When a voltage is applied to the gate, an inversion layer is formed below the oxide layer. This creates a conducting channel between the source and drain regions from which current can flow. The size of the conducting channel is controlled by the voltage applied to the control gate and this is directly proportional to the current flowing through the transistor.The high voltage anti-parallel diode helps protect the device from high voltage spikes that might occur during operation. This helps to reduce the occurrence of power failures and increases the reliability of the BUK7M8R0-40EX.

Conclusion

The BUK7M8R0-40EX is a high performance power MOSFET that is ideal for heavy switching applications such as industrial motor control and LED lighting systems. The device features a wide gate threshold voltage range and a high voltage anti-parallel diode which help protect the device from high voltage spikes. Its low on resistance and high current handling capability make the device an excellent choice for high efficiency and low power loss applications such as mobile computing equipment and DC/DC power conversion.

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