BUK7Y08-40B,115 Allicdata Electronics

BUK7Y08-40B,115 Discrete Semiconductor Products

Allicdata Part #:

1727-4601-2-ND

Manufacturer Part#:

BUK7Y08-40B,115

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 40V 75A LFPAK
More Detail: N-Channel 40V 75A (Tc) 105W (Tc) Surface Mount LFP...
DataSheet: BUK7Y08-40B,115 datasheetBUK7Y08-40B,115 Datasheet/PDF
Quantity: 1000
1500 +: $ 0.25838
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: SC-100, SOT-669, 4-LFPAK
Supplier Device Package: LFPAK56, Power-SO8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 105W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2040pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 36.3nC @ 10V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 8 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK7Y08-40B,115, is a single transistor from a family of transistors known as field effect transistors, or FETs. FETs, like traditional transistors, are designed to amplify or switch electrical signals. However, they are different than traditional transistors in a few important ways. To understand the differences, it’s helpful to first discuss traditional bipolar transistors.

Bipolar transistors are in many ways the most common type of transistor. They are composed of three terminals: a collector, an emitter, and a base. Control of current is accomplished by controlling the voltage at the base. In an npn-type bipolar transistor, if the base is positive in respect to the emitter, a small current will cause a much larger current to flow from the collector to the emitter. This current can be varied by varying the base voltage.

Limitations with bipolar transistors include their relatively large size, their relatively large power dissipation, and some additional internal parasitic capacitances. Field effect transistors, or FETs, were developed to address these shortcomings.

FETs consist of four terminals: source, drain, gate and bulk. The gate and bulk terminals are electrically connected and are treated as a single terminal. The source and drain terminals are connected to a channel of semiconductor material. This channel forms a conducting path between the source and the drain.

Control of current flow through this channel is accomplished by controlling the voltage applied to the gate. If the positive voltage at the gate is greater than the voltage at the source and drain, then conduction current will be present in the channel. The BUK7Y08-40B,115 is a single FET, which means it only has a single source and a single drain.

FETs operate with much lower power dissipation than bipolar transistors and offer very high levels of input resistance. FETs are also much smaller in size which makes them more convenient in application. The BUK7Y08-40B,115 is typically used in variable gain applications where its low power dissipation and high input resistance make it well suited.

The BUK7Y08-40B,115 is also used in switching applications where its low power dissipation and small size make it an ideal choice. In switching applications, the BUK7Y08-40B,115 is often used to switch DC signals. It is also used in high frequency circuits where its small size and low power dissipation are advantageous.

The BUK7Y08-40B,115 is an excellent alternative to traditional bipolar transistors in many applications. It offers low power dissipation, high input resistance, and small size. This makes it well suited for amplifying, variable gain, and switching applications. It is also useful for high frequency circuits where its low power dissipation and small size are beneficial.

The specific data is subject to PDF, and the above content is for reference

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