BUK7Y28-75B,115 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 1mA
Package / Case:	SC-100, SOT-669, 4-LFPAK
Supplier Device Package:	LFPAK56, Power-SO8
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	85W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1417pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	21.2nC @ 10V
Series:	Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs:	28 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	35.5A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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BUK7Y28-75B,115 Application Field and Working PrincipleThe BUK7Y28-75B is a type of Field-Effect Transistor (FET) specifically designed to be used in the switch-mode control circuits of various electronic products, such as computers, appliances, audio equipment and numerous other applications. It is an N-channel power MOSFET with low on-state resistance, fast switching speed and low gate charge. Generally, all FETs are designed to function as electrical switches for controlling the flow of electrical current in a circuit.Like any transistor, FETs are made from three layers of semiconductor material. These three layers are referred to as the Source, Drain and the Gate. The designer of any electronic product must carefully match these layers with the current requirements of the circuit as well as its characteristics. This is where the BUK7Y28-75B comes in handy as it is specifically designed to make the switch-mode controls in electronic devices more efficient and reliable.The BUK7Y28-75B is a third-generation power MOSFET with low gate charge, low on-state resistance, fast switching speed and low gate leakage. Its core features include extremely low RDS(on) (on-state resistance) of 75mΩ, very high drain current of 115A and maximum voltage rating of 55V. It features low threshold (Vgsth: 1.2V). The low gate charge reduces the required driving power, thus contributing to the system cost savings.Generally speaking, the working principle of the BUK7Y28-75B is based on the same principles as all FETs. FETs work by using voltage at the Gate to control the current flow between the Source and Drain. When voltage is applied to the Gate, this results in an electric field which controls how much current can flow between the two points. This process is similar to a valve, when the voltage increases, the current will open wider and will allow more current to flow. The Source and Drain form what is known as a “P-N junction”, which is essentially a flow of electrons between the two points. As the charge passes through the junction, it creates an electric field across the Gate, known as a “capacitor effect”. This resulting potential difference influences the flow of current in the P-N junction and functions to modulate the on/off switching.The BUK7Y28-75B is designed to provide superior performance in switch-mode control circuits. Unlike traditional FETs, this device is designed to provide higher blocking voltage and channel acceleration, fast switching times and a continuous gate-drain current drive. The fast switching times of this device reduces power dissipation, thus increasing efficiency and reducing potential excess heat.Overall, the BUK7Y28-75B is an advanced FET solution that is tailored to specific switch-mode control applications. It is a powerful device that offers superior performance, ease of use and reliability. This device is ideal for engineers who need to create efficient and reliable circuits that operate within their specified parameters.

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