Allicdata Part #: | 1727-1113-2-ND |
Manufacturer Part#: |
BUK7Y4R4-40EX |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 100A LFPAK |
More Detail: | N-Channel 40V 100A (Tc) 147W (Tc) Surface Mount LF... |
DataSheet: | BUK7Y4R4-40EX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.28973 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 147W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2781pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 4.4 mOhm @ 25A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK7Y4R4-40EX is a type of n-channel enhancement mode Field-Effect Transistor (FET) designed and manufactured by Infineon Technologies AG. This type of FET has different applications, including low noise amplifiers, high speed power switching and digital logic applications. In this article, we will explore the features and working principles of this FET.
Overview
The BUK7Y4R4-40EX is an n-channel field-effect transistor with a maximum drain-source voltage of 40V and a drain current rating of 7A. It is a single FET manufactured using a process called “chopper-stabilized” enhancement mode, designed to offer excellent switching performance and low noise operation. The transistor is a package type PMPF-7, with a total length of 34.8mm and a total width of 9.7mm. Its maximum operating temperature is up to 175 degrees Celsius.
Features and Benefits
The BUK7Y4R4-40EX offers many features and benefits, due to its unique design. The FET has low resistance, allowing it to switch quickly and with minimal power dissipation. It also offers low output voltage drops in the ON state, resulting in low power consumption. The FET\'s chopper-stabilized enhancement mode further improves switching performance, while its low noise operation allows it to be used in noise-sensitive applications. In addition, the FET is designed to reduce gate-source capacitance, improving its transient response and noise immunity, as well as reducing power losses.
Working Principle
The BUK7Y4R4-40EX is an n-channel field-effect transistor, which utilizes a gate-source voltage to control its current flow. In the default state, the gate-source voltage is zero, causing the FET’s device characteristics to act as an open switch, allowing no current to flow. When a positive gate-source voltage is applied, the FET’s device characteristics change, allowing current to flow from drain to source. This is known as the FET’s “ON” state. The magnitude of the voltage applied to the FET determines the amount of current that can flow from drain to source.
Conclusion
The BUK7Y4R4-40EX is an n-channel enhancement mode FET designed and manufactured by Infineon Technologies AG. This FET offers many features and benefits, such as low on-resistance, low output voltage drops in the ON state, chopper-stabilized enhancement mode and low noise operation. It is designed for applications such as low noise amplifiers, high speed power switching and digital logic applications. The FET is also designed to reduce gate-source capacitance, to improve its transient response and noise immunity, as well as reducing power losses.
The specific data is subject to PDF, and the above content is for reference
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