| Allicdata Part #: | 1727-7177-2-ND |
| Manufacturer Part#: |
BUK9214-30A,118 |
| Price: | $ 0.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 30V 63A DPAK |
| More Detail: | N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPA... |
| DataSheet: | BUK9214-30A,118 Datasheet/PDF |
| Quantity: | 7500 |
| 2500 +: | $ 0.27143 |
| Vgs(th) (Max) @ Id: | 2V @ 1mA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | DPAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 107W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2317pF @ 25V |
| Vgs (Max): | ±15V |
| Gate Charge (Qg) (Max) @ Vgs: | 31nC @ 5V |
| Series: | Automotive, AEC-Q101, TrenchMOS™ |
| Rds On (Max) @ Id, Vgs: | 12 mOhm @ 25A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 63A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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BUK9214-30A,118 is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a kind of Transistor - FETs, MOSFETs - Single product. MOSFETs are semiconductor devices that employ a combination of metal oxide and semiconductor materials . Exhibiting high current density, low power dissipation, and low gate drive power, these components are preferred in a wide range of applications.
The BUK9214-30A,118 is a 30V N-Channel MOSFET featuring an extremely low on-state resistance and low gate charge. This device is designed for high-speed switching applications and is available in surface mount and through-hole packages.
BUK9214-30A,118 has a Drain-Source breakdown voltage( BVDSS) of 30V, Gate-Source breakdown voltage (BVGS) of 8V, threshold voltage (VGS) of 4V, Gate charge (Qg) of max 3.2nC, and an on-state drain current of 78A. It has a continuous drain current rating at a temperature up to 25°C and a maximum channel temperature rating of 175°C. BUK9214-30A,118 has a maximum power dissipation of 18.5W, minimum oscillation frequency of 2.2MHz, and a maximum enhancement-mode operating voltage of 6V.
BUK9214-30A,118 is ideal for many switching applications such as power supplies, DC-DC converters, regulators, and control applications. It is also suitable for RF switches, high-performance audio amplifiers and applications where high frequency performance is essential. This MOSFET also finds use in power feedback and load-sensing circuitry. Furthermore this device provides excellent high current and voltage handling capabilities.
The working principle of the BUK9214-30A,118 involves using of a metal oxide layer as a gate dielectric and an electric field gate which can be used to modulate the conductivity of the channel between the source and the drain. When a positive gate voltage is applied, electrons are attracted to the gate and the channel is subsequently inverted, creating a conducting channel. Conversely, when a negative gate voltage is applied, the electrons are repelled by the gate and the channel is closed, blocking the current flow. As a result, this device is able to switch either on or off depending on the gate voltage, thus allowing current to be controlled.
BUK9214-30A,118 is thus an important component in lightweight, low-power switching applications. With its high current handling capability, low on-state resistance, and low gate drive power, the BUK9214-30A,118 is a valuable component for applications requiring both high-efficiency and high-frequency performance.
The specific data is subject to PDF, and the above content is for reference
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BUK9214-30A,118 Datasheet/PDF