BUK9214-30A,118 Allicdata Electronics
Allicdata Part #:

1727-7177-2-ND

Manufacturer Part#:

BUK9214-30A,118

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 30V 63A DPAK
More Detail: N-Channel 30V 63A (Tc) 107W (Tc) Surface Mount DPA...
DataSheet: BUK9214-30A,118 datasheetBUK9214-30A,118 Datasheet/PDF
Quantity: 7500
2500 +: $ 0.27143
Stock 7500Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 107W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2317pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 12 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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BUK9214-30A,118 is a type of single MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is a kind of Transistor - FETs, MOSFETs - Single product. MOSFETs are semiconductor devices that employ a combination of metal oxide and semiconductor materials . Exhibiting high current density, low power dissipation, and low gate drive power, these components are preferred in a wide range of applications.

The BUK9214-30A,118 is a 30V N-Channel MOSFET featuring an extremely low on-state resistance and low gate charge. This device is designed for high-speed switching applications and is available in surface mount and through-hole packages.

BUK9214-30A,118 has a Drain-Source breakdown voltage( BVDSS) of 30V, Gate-Source breakdown voltage (BVGS) of 8V, threshold voltage (VGS) of 4V, Gate charge (Qg) of max 3.2nC, and an on-state drain current of 78A. It has a continuous drain current rating at a temperature up to 25°C and a maximum channel temperature rating of 175°C. BUK9214-30A,118 has a maximum power dissipation of 18.5W, minimum oscillation frequency of 2.2MHz, and a maximum enhancement-mode operating voltage of 6V.

BUK9214-30A,118 is ideal for many switching applications such as power supplies, DC-DC converters, regulators, and control applications. It is also suitable for RF switches, high-performance audio amplifiers and applications where high frequency performance is essential. This MOSFET also finds use in power feedback and load-sensing circuitry. Furthermore this device provides excellent high current and voltage handling capabilities.

The working principle of the BUK9214-30A,118 involves using of a metal oxide layer as a gate dielectric and an electric field gate which can be used to modulate the conductivity of the channel between the source and the drain. When a positive gate voltage is applied, electrons are attracted to the gate and the channel is subsequently inverted, creating a conducting channel. Conversely, when a negative gate voltage is applied, the electrons are repelled by the gate and the channel is closed, blocking the current flow. As a result, this device is able to switch either on or off depending on the gate voltage, thus allowing current to be controlled.

BUK9214-30A,118 is thus an important component in lightweight, low-power switching applications. With its high current handling capability, low on-state resistance, and low gate drive power, the BUK9214-30A,118 is a valuable component for applications requiring both high-efficiency and high-frequency performance.

The specific data is subject to PDF, and the above content is for reference

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