| Allicdata Part #: | BUK9230-80EJ-ND |
| Manufacturer Part#: |
BUK9230-80EJ |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | MOSFET N-CH 80V DPAK |
| More Detail: | |
| DataSheet: | BUK9230-80EJ Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | * |
| Part Status: | Obsolete |
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The BUK9230-80EJ is a high-voltage MOSFET for use in switching and power applications. It is a monolithic high-performance vertical power MOSFET that takes advantage of the latest high-voltage process technology from ROHM. This FET features a low Qg, low Rdson and an improved gate charge. This FET can be used for various switching and power applications.
Applications for the BUK9230-80EJ include LED lighting, DC/DC converters, notebooks, inverters, motor drivers, and telecommunication components. The FET is designed to provide superior system performance in lighting, telecom, mobile and computer applications. This device is ideal for use in low-noise and low-power circuits requiring high-voltage performance.
The working principle of the BUK9230-80EJ is based on the generation and / or maintenance of an electric field between two points on a semiconductor device. The electric field acts as a barrier that prevents electron flow. In the case of MOSFETs, the electric field is created by a voltage applied across the drain and source pins. This electric field acts as a barrier, preventing the flow of electrons between the drain and source pins.
To keep this barrier in place, a certain threshold voltage is required to maintain it. The threshold voltage depends on the type of semiconductor material used in the MOSFET. In the case of the BUK9230-80EJ, the threshold voltage required is 15 V. When a larger voltage than the threshold voltage is applied across the drain and source pins, the barrier will break down and electrons will start flowing through the device.
The BUK9230-80EJ operates with an improved gate charge, providing a lower Rdson that allows it to handle higher voltages and currents. The FET also has a low Qg which reduces the power it consumes and increases its efficiency. The FET is rated for peak currents of up to 90 A, and is capable of switching at a frequency of up to 10 MHz.
In addition, the FET also features a maximum drain-source breakdown voltage of 300 V. This makes it suitable for applications requiring higher voltages. Finally, the wide operating temperature range of -55°C to +175°C makes it suitable for a wide range of applications.
In conclusion, the BUK9230-80EJ is an ideal solution for power and switching applications requiring high-voltage performance. Its low Qg and Rdson, combined with a wide operating temperature range, make it suitable for use in a variety of industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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BUK9230-80EJ Datasheet/PDF