BUK9234-100EJ Allicdata Electronics
Allicdata Part #:

BUK9234-100EJ-ND

Manufacturer Part#:

BUK9234-100EJ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 100V DPAK
More Detail:
DataSheet: BUK9234-100EJ datasheetBUK9234-100EJ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The BUK9234-100EJ is a N-channel, logic-level enhancement-mode field effect transistor (FET). It is designed for portable and battery-powered applications such as cellular phones and personal digital assistants. The BUK9234-100EJ operates from a supply voltage ranging from 3V to 12V and features an on-resistance as low as 52Ω. The FET is a three-terminal device with a gate, a source and a drain. The gates determines the current flow through the device and is controlled by applying a voltage to the gate. When the gate voltage is low, the current flow is low, and when the gate voltage is high the current flow increases.

The BUK9234-100EJ features an insulated gate structure which is insulated from the channel via a layer of gate insulation. This gate insulation provides better protection from such risks as accidental shorts, electrostatic discharge and other potential hazards that can damage the device. Using the insulated gate enables the FET to be driven at higher frequencies and currents than conventional transistors.

The FET is an ideal choice for applications requiring low on-state resistance and high gate capacitance. It is well suited for switching applications such as voltage regulators, switching power supplies, and motor control circuits. It is also ideal for applications where low on-resistance and low gate capacitance is required such as high-speed signal bus communication, or when high frequency operation is necessary.

The BUK9234-100EJ is fabricated using a silicon-on-insulator technology which enables the device to be more power-efficient as well as to have an increased switching speed. This technology also provides better thermal efficiency and improved device longevity. The FET is rated at a continuous drain current of 3A (6A pulsed) and is capable of operating at high frequencies up to 500MHz.

The FET can be used as a switch or an amplifier and is a very reliable device. It is environment friendly, low in cost and can be used in a wide variety of applications including power management, consumer electronics, automotive, telecommunication and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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