BUK9511-55A,127 Allicdata Electronics
Allicdata Part #:

568-9733-5-ND

Manufacturer Part#:

BUK9511-55A,127

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 55V 75A TO220AB
More Detail: N-Channel 55V 75A (Tc) 166W (Tc) Through Hole TO-2...
DataSheet: BUK9511-55A,127 datasheetBUK9511-55A,127 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 166W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 25V
Vgs (Max): ±10V
Series: TrenchMOS™
Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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BUK9511-55A, 127 is a Single Field Effect Transistor (FET), which is part of a larger family known as metal oxide semiconductor FETs (MOSFETs). It is one of the most popular types of transistors and has several advantages over other types. It is one of the most widely used transistors for power management applications because of its low on-resistance and high input impedance.

BUK9511-55A, 127 is designed for low voltage, high frequency switching and amplification applications. Its low on-resistance and high input impedance make it ideal for switching applications such as voltage regulator, motor driver and power supply circuits. It is also used in high frequency amplifiers, video amplifiers and radio frequency amplifiers. Additionally, it can be used in high power applications such as class D audio power amplifiers.

The working principle of the BUK9511-55A, 127 is based on the effects of a gate voltage applied to a metal oxide layer. The metal oxide layer acts like an insulator when the gate voltage is low and it becomes a conductor when the gate voltage is increased above a certain level. This effect is known as “threshold voltage”. The threshold voltage varies depending on the type of transistor and the type of application.

The BUK9511-55A, 127 is a n-channel device, meaning that the current can only flow between its source and its drain when the gate is positive. This transistor has a breakdown voltage of 77V and a gate-source threshold voltage of 2V. Its typical on-state resistance is 200mohm. This means that it is capable of switching loads up to 77A when used as a switch.

In conclusion, the BUK9511-55A, 127 is a powerful and popular transistor for low-voltage, high-frequency switching and amplification applications. It has a low on-resistance, a high input impedance and a high breakdown, making it ideal for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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