BUK9615-100E,118 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-1094-2-ND |
Manufacturer Part#: |
BUK9615-100E,118 |
Price: | $ 0.50 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 100V 66A D2PAK |
More Detail: | N-Channel 100V 66A (Tc) 182W (Tc) Surface Mount D2... |
DataSheet: | BUK9615-100E,118 Datasheet/PDF |
Quantity: | 1000 |
4800 +: | $ 0.45848 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 182W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6813pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9615-100E,118 is a part of the single field effect transistors (FETs) family. It is a p-channel, insulated gate field-effect transistor (IGFET) used for general purpose switching and amplifying applications.
The BUK9615-100E,118 are designed to operate under conditions which correspond to the small signal DC to 100 kHz frequency range and low power applications, they also have high stability over temperature and are suitable for medium voltage applications.
The BUK9615-100E,118 are particularly well-suited for applications where it is important to reduce the power consumption, such as in the low current and low voltage applications, and the switching applications which require a low input power.
This device has a source and drain junction, which are connected to the two opposite ends of the gate, creating a field which controls the current flow when a voltage is applied to the gate. When the gate voltage is raised, the capacitance increases between the gate and the source and drain, which in turn increases the current flow. Conversely, when the gate voltage is reduced, the current flow also decreases.
The BUK9615-100E,118 has very low on-resistance, which results in high switching speeds and a greater overall efficiency. This transistor has a low operating temperature, which helps maintain a low thermal interference with the adjacent components.
The BUK9615-100E,118 has a low voltage breakdown, allowing it to be used at higher power levels. It also has a high current-carrying capability and can operate at frequencies up to 100 kHz.
In addition to its high speed and low power consumption, the BUK9615-100E,118 also has low noise and fast switching capabilities, which make it well-suited for RF and other high frequency applications. The BUK9615-100E,118 also has an excellent combination of thermal and ESD protection, making it an ideal choice for environments with high levels of dust, moisture, and vibration.
The BUK9615-100E,118 is mainly used in automotive, industrial, computer, telecommunication and consumer applications, including switching power devices, audio amplifiers and power converters. It is also widely used in low-power digital circuits, such as logic gates and digital switch integrated circuits, and in applications with heat-sensing and temperature monitoring.
The BUK9615-100E,118 is an ideal choice for high-performance, power-sensitive designs. Its low voltage breakdown, high current-carrying capability, and excellent combination of thermal and ESD protection make it a great choice for any design requiring speed, efficiency, and reliability.
The specific data is subject to PDF, and the above content is for reference
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