BUK9M14-40EX Discrete Semiconductor Products |
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Allicdata Part #: | 1727-2571-2-ND |
Manufacturer Part#: |
BUK9M14-40EX |
Price: | $ 0.20 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 44A LFPAK |
More Detail: | N-Channel 40V 44A (Tc) 55W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9M14-40EX Datasheet/PDF |
Quantity: | 7500 |
1500 +: | $ 0.17391 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 55W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1211pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 11.3nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9M14-40EX is a type of Field Effect Transistor (FET) that features a maximum drain current of 151 A at 26 V and an on-state resistance of 16 mΩ. It is designed to be used in low frequency and high-speed switching applications such as DC/DC converters, power supplies, and motor control. In addition, it can also be used as a regular switch in some applications, although its lower power rating makes it less suitable for switching larger loads.
FETs are a type of transistor that can control the current and voltage flow between two conductors. These transistors work by using an applied electric field to control the flow of current, allowing them to act as switches, amplifiers, and voltage regulators. There are two main types of FETs: N-channel and P-channel devices. The BUK9M14-40EX is an N-channel device, meaning it has a source, drain, and gate, with electrons flowing from the source to the drain.
The working principle of the BUK9M14-40EX is fairly simple. When a voltage is applied to the gate, electrons in the source channel are attracted to the gate, forming an inversion layer or channel in the substrate. This inversion channel allows electrons to flow from the source to the drain, which creates a current flow. The larger the voltage applied to the gate, the wider the inversion channel becomes and the greater the current flow. As the voltage applied to the gate increases, the increased current creates a stronger electric field that eventually turns off the device, preventing it from drawing more current.
The BUK9M14-40EX is mainly used for low frequency and high-speed switching in applications such as DC/DC converters, power supplies, and motor control. In general, FETs are ideal for these applications as they have a fast switching speed compared to regular switches, while also having a lower voltage drop and higher efficiency. In addition, FETs also have a much greater power handling capacity, allowing them to be used for switching large loads.
In summary, the BUK9M14-40EX is a type of Field Effect Transistor (FET) designed for low frequency and high-speed switching applications. It works by using an applied electric field to control the flow of current, allowing it to act as a switch, amplifier, and voltage regulator. It has a maximum drain current of 151 A at 26 V, an on-state resistance of 16 mΩ, and is mainly used for switching in DC/DC converters, power supplies, and motor control.
The specific data is subject to PDF, and the above content is for reference
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