Allicdata Part #: | 1727-2575-2-ND |
Manufacturer Part#: |
BUK9M23-80EX |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 37A LFPAK |
More Detail: | N-Channel 80V 37A (Tc) 79W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9M23-80EX Datasheet/PDF |
Quantity: | 1000 |
1500 +: | $ 0.22882 |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80V |
Current - Continuous Drain (Id) @ 25°C: | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 5V |
Vgs (Max): | ±10V |
Input Capacitance (Ciss) (Max) @ Vds: | 2808pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | LFPAK33 |
Package / Case: | SOT-1210, 8-LFPAK33 (5-Lead) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BUK9M23-80EX is a field-effect transistor (FET) used in a variety of electronic applications. It has a single gate structure, allowing it to be used in many types of circuits. The BUK9M23-80EX is capable of using both positive and negative voltage inputs and is therefore suitable for use in a range of low-power and high-frequency circuits. This makes it suitable for use in a wide array of applications.
The BUK9M23-80EX has a wide range of features, including low on-resistance, fast switching times, and a gate leakage current of less than 1μA. These features make it suitable for low-power and high-frequency applications. It is also capable of operating at temperatures ranging from -55°C to 125°C. This makes it suitable for use in both hot and cold climates. The BUK9M23-80EX also has a low gate voltage threshold of just 2V, making it suitable for use in circuits that require very low voltage operation.
The BUK9M23-80EX is a depletion-type FET, meaning that it can control its current without the need for an external voltage source. As a result, it is capable of producing a high drain current even in low-voltage environments. This makes it ideal for use in circuits that require a high current rating. The BUK9M23-80EX also has an extremely low capacitance of just 5pF, making it suitable for use in high-frequency applications.
The working principle of the BUK9M23-80EX is based on the flow of electrons between the source and the drain when a voltage is applied to the gate. When a positive voltage is applied to the gate, electrons flow from the source to the drain, resulting in a current flowing in the circuit. When a negative voltage is applied to the gate, electrons are repelled, causing a current to stop flowing. The amount of current that flows is determined by the voltage applied to the gate.
The BUK9M23-80EX is a versatile FET suitable for a wide range of applications. It is capable of operating in a wide range of voltages and is suitable for use in both low-power and high-frequency circuits. It features a low capacitance and gate voltage threshold, making it ideal for use in circuits that require both low power consumption and high switching frequencies. The BUK9M23-80EX is a reliable FET for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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