BUK9M23-80EX Allicdata Electronics
Allicdata Part #:

1727-2575-2-ND

Manufacturer Part#:

BUK9M23-80EX

Price: $ 0.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: MOSFET N-CH 80V 37A LFPAK
More Detail: N-Channel 80V 37A (Tc) 79W (Tc) Surface Mount LFPA...
DataSheet: BUK9M23-80EX datasheetBUK9M23-80EX Datasheet/PDF
Quantity: 1000
1500 +: $ 0.22882
Stock 1000Can Ship Immediately
$ 0.25
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2808pF @ 25V
Vgs (Max): ±10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
Series: Automotive, AEC-Q101, TrenchMOS™
Rds On (Max) @ Id, Vgs: 20 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The BUK9M23-80EX is a field-effect transistor (FET) used in a variety of electronic applications. It has a single gate structure, allowing it to be used in many types of circuits. The BUK9M23-80EX is capable of using both positive and negative voltage inputs and is therefore suitable for use in a range of low-power and high-frequency circuits. This makes it suitable for use in a wide array of applications.

The BUK9M23-80EX has a wide range of features, including low on-resistance, fast switching times, and a gate leakage current of less than 1μA. These features make it suitable for low-power and high-frequency applications. It is also capable of operating at temperatures ranging from -55°C to 125°C. This makes it suitable for use in both hot and cold climates. The BUK9M23-80EX also has a low gate voltage threshold of just 2V, making it suitable for use in circuits that require very low voltage operation.

The BUK9M23-80EX is a depletion-type FET, meaning that it can control its current without the need for an external voltage source. As a result, it is capable of producing a high drain current even in low-voltage environments. This makes it ideal for use in circuits that require a high current rating. The BUK9M23-80EX also has an extremely low capacitance of just 5pF, making it suitable for use in high-frequency applications.

The working principle of the BUK9M23-80EX is based on the flow of electrons between the source and the drain when a voltage is applied to the gate. When a positive voltage is applied to the gate, electrons flow from the source to the drain, resulting in a current flowing in the circuit. When a negative voltage is applied to the gate, electrons are repelled, causing a current to stop flowing. The amount of current that flows is determined by the voltage applied to the gate.

The BUK9M23-80EX is a versatile FET suitable for a wide range of applications. It is capable of operating in a wide range of voltages and is suitable for use in both low-power and high-frequency circuits. It features a low capacitance and gate voltage threshold, making it ideal for use in circuits that require both low power consumption and high switching frequencies. The BUK9M23-80EX is a reliable FET for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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