Allicdata Part #: | 1727-2576-2-ND |
Manufacturer Part#: |
BUK9M24-40EX |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 40V 30A LFPAK |
More Detail: | N-Channel 40V 30A (Tc) 44W (Tc) Surface Mount LFPA... |
DataSheet: | BUK9M24-40EX Datasheet/PDF |
Quantity: | 1500 |
1500 +: | $ 0.13548 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SOT-1210, 8-LFPAK33 |
Supplier Device Package: | LFPAK33 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 44W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 798pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 5V |
Series: | Automotive, AEC-Q101, TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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BUK9M24-40EX, a type of MOSFET device, is a popular FET among the integrated circuit (IC) applications. It is used in various applications from power management, signal conditioning, and analog/mixed-signal circuit designs. BUK9M24-40EX is a three-terminal, normally-off field-effect transistor (FET) used in high-frequency circuit designs, due to its low On-resistance and high transconductance.
BUK9M24-40EX consists of a molybdenum silicon-oxide gate with a drain and source of silicon. Due to its low On-resistance, the BUK9M24-40EX can be used in high-speed applications with low voltage drop and low distortion. Its high transconductance ensures high speed switching with reduced switching losses.
The commonly used FETs are known as Junction Field-Effect Transistors (JFETs). These are single-gate devices which are normally used in low to medium voltage applications. Unlike JFETs, BUK9M24-40EX is a Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). As MOSFETs are vulnerable to latchup problems, BUK9M24-40EX has been designed to mitigate latchup, thus making it suitable for high voltage and current applications.
The working principle of the BUK9M24-40EX is based on the principle of electrostatic field. This device operates by applying a voltage to the gate, which creates an electrical field. This electric field will control the current flow between the source and the drain. When a voltage is applied to the gate, it will create an electric field. This field is proportionate to the amount of voltage which was applied to the gate. The gate voltage will cause a change in the amount of current flowing through the device, which is referred to as the transconductance.
The BUK9M24-40EX is used for a wide range of high-power, low-frequency applications. It is well suited for applications requiring a low total harmonic distortion (THD) and high power efficiency, such as switch-mode power supplies and audio amplifiers. The low On-resistance of the BUK9M24-40EX allows designers to improve efficiency of power stages as well as reduce switched-mode circuits. Additionally, its fast switching speed makes it suitable for high-power switching applications such as converters, motor drives, and inductors.
In conclusion, BUK9M24-40EX is a type of three-terminal MOSFET designed specifically for high-frequency circuit designs. It is used in a wide range of applications requiring low On-resistance, high transconductance, low total harmonic distortion (THD), and high switching speed. Its low On-resistance and high transconductance make it suitable for applications such as switch-mode power supplies and audio amplifiers, as well as for high-power switching applications such as converters, motor drives and inductors.
The specific data is subject to PDF, and the above content is for reference
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