Allicdata Part #: | 1727-1119-2-ND |
Manufacturer Part#: |
BUK9Y107-80EX |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | MOSFET N-CH 80V 11.8A LFPAK |
More Detail: | N-Channel 80V 11.8A (Tc) 37W (Tc) Surface Mount LF... |
DataSheet: | BUK9Y107-80EX Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.1V @ 1mA |
Package / Case: | SC-100, SOT-669, 4-LFPAK |
Supplier Device Package: | LFPAK56, Power-SO8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 706pF @ 25V |
Vgs (Max): | ±10V |
Gate Charge (Qg) (Max) @ Vgs: | 6.2nC @ 5V |
Series: | TrenchMOS™ |
Rds On (Max) @ Id, Vgs: | 98 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 5V |
Current - Continuous Drain (Id) @ 25°C: | 11.8A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The BUK9Y107-80EX is a type of Field-Effect Transistor (FET) that mainly finds its applications in low-current, DC-controlled circuits. A FET operates in the same fashion as a typical bipolar transistor, but instead of using direct current (DC) to control its switch states, a Field‐Effect Transistor uses an external electrical field for this purpose. Because of this feature, FETs are able to provide efficient switching capabilities without the potential for burnout or thermal distortion in many applications.
The BUK9Y107-80EX is a form of Enhancement-Mode Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). MOSFETs are characterized by their ability to efficiently transport electrons through a semi-conductor medium, such as silicon. The BUK9Y107-80EX transistor contains a layer of an insulating oxide semiconductor (MOS) material that separates the semiconductor from the gate electrode. An electric field generated by the gate electrode controls the flow of electrons across the oxide layer. This technology allows for a switching speed of up to 25 MHz. This makes the BUK9Y107-80EX ideal for applications in high-speed communications devices, including adjustable jammer and radio frequency receiver circuits.
One of the key advantages of the BUK9Y107-80EX transistor is its low on-resistance capability. This means that the transistor will experience less voltage drop during operation, leading to enhanced efficiency and greater energy savings. Additionally, the transistor can operate in `linear mode\', allowing it to control the flow of current without interruption. This feature makes the BUK9Y107-80EX ideal for controlling the output of variable frequency oscillators (VFOs) in a wide range of industrial applications.
The BUK9Y107-80EX transistor is also notable for its pinchoff voltage speed. This is the voltage at which the transistor shuts off and back on again quickly, enabling it to function as a switch with high speed and accuracy. The ability of the transistor to shut off and back on again quickly reduces the ”bounce” effect that occurs when the switch is opened or closed. Thus, the BUK9Y107-80EX can be used in applications where minimizing interference is important, such as instrumentation and automation circuits.
In summary, the BUK9Y107-80EX transistor is a form of Enhancement-Mode MOSFET with low on-resistance capabilities and high speed and accuracy. It is primarily used in low-current DC-controlled circuits as a switch that can control the flow of current without interruption. The transistor is ideal for applications in high-speed communications devices, variable frequency oscillators, and instrumentation and automation circuits.
The specific data is subject to PDF, and the above content is for reference
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