CSD25202W15T

Vgs(th) (Max) @ Id:	1.05V @ 250µA
Package / Case:	9-UFBGA, DSBGA
Supplier Device Package:	9-DSBGA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	500mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1010pF @ 10V
Vgs (Max):	-6V
Gate Charge (Qg) (Max) @ Vgs:	7.5nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	26 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	4A (Ta)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD25202W15T Application Field and Working Principle

The CSD25202W15T is a single N-channel metal-oxide-silicon field-effect transistor (MOSFET) designed for power management applications in space-constrained products and that require high efficiency in the most compact form factor. It is widely used in industries such as medical devices, industrial, automotive and consumer electronics applications.

What is the CSD25202W15T?

The CSD25202W15T is a highly efficient MOSFET with a small form factor. It is optimized for space-constrained power applications and is specifically designed to provide higher efficiency in the most compact form factor. The major advantage of this MOSFET is its low power drain. Its power dissipation rate is 35% lower than that of comparable components, and it has a total gate charge of 5.6nC for minimal power consumption.

Applications of CSD25202W15T

The CSD25202W15T is a highly efficient and power-saving MOSFET, making it suitable for applications that require low energy consumption. It is widely used in consumer electronics, medical devices, industrial, and automotive applications as a power management device. It is beneficial in these applications due to its low power drain and high efficiency, which help to improve the performance of the device.It is used in LED lighting applications in order to power LED modules with the most efficient system possible. It is also used in mobile and portable battery-powered applications such as medical devices, smartphones, tablets and other consumer electronics like Bluetooth speakers. The CSD25202W15T is also used in automotive and industrial applications for efficient power management solutions.

Working Principle of CSD25202W15T

The CSD25202W15T is based on the same principles as other MOSFET transistors. A MOSFET is an insulated-gate field-effect transistor that gains its name from the metal-oxide-silicon construction of its gate terminals. The gate is an insulated layer that is situated between the source and drain terminals. When a voltage is applied to the gate terminal, it changes the conductive properties of the electron flow between the source and drain terminals, effectively acting as a switch.This switch allows the CSD25202W15T MOSFET to regulate current in efficient and cost-effective ways. It is designed to be used in high-current applications, with a maximum continuous drain current of 8A (at mounted case temperature of 25°C) and a maximum ON-state resistance of 30mΩ. This makes it an ideal choice for applications that require high efficiency and cost savings.

Conclusion

The CSD25202W15T single N-channel MOSFET is designed to provide higher efficiency and power savings in the most compact form factor. Its small size and low power drain make it suitable for power management applications in industries such as medical, consumer electronics, industrial and automotive. Its maximum continuous drain current and ON-state resistance give it an advantage in high-current applications, making it an efficient and cost-effective solution for power management needs.

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