CSD22204WT

Vgs(th) (Max) @ Id:	950mV @ 250µA
Package / Case:	9-UFBGA, DSBGA
Supplier Device Package:	9-DSBGA
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.7W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1130pF @ 4V
Vgs (Max):	-6V
Gate Charge (Qg) (Max) @ Vgs:	24.6nC @ 4.5V
Series:	NexFET™
Rds On (Max) @ Id, Vgs:	9.9 mOhm @ 2A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	5A (Ta)
Drain to Source Voltage (Vdss):	8V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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CSD22204WT is a high-performance N-Channel enhancement-mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET) designed for use in high-efficiency, high-bandwidth and high-current switching applications. It is capable of operating at extremely high switching speeds, allowing it to be used in applications that would otherwise require more complex switching devices such as bipolar transistors. Additionally, the device is also capable of providing excellent switching performance over temperature and voltage variations.The CSD22204WT features an optimized construction process that provides a low on-resistance and a robust gate structure for fast switching and improved power dissipation. The device has been designed to incorporate a relatively wide range of voltages and drive currents, making it well suited to a variety of applications. In addition, the device also features a low gate charge and a low input capacitance, both of which contribute to its excellent switching performance.The CSD22204WT utilizes the latest in MOSFET technology to provide superior performance with respect to power efficiency, speed, and reliability. The device can be used in a wide range of applications, including both DC and AC circuits. In addition to this, the device also has a low on-state resistance, which is further improved by the inclusion of a gate driver. This gate driver is essential for ensuring the reliable operation of the device, as it allows for smooth and consistent switching regardless of voltage, temperature, and other environmental conditions.In DC circuits, the CSD22204WT can be used to switch large currents, allowing for efficient power conversion devices such as DC-DC converters. Additionally, it can also be used in the control of high-power motors, and for meter interfacing devices, as well as level and voltage detection. In AC circuits, the device can be used for high-frequency switching applications and can be used to switch large currents at high voltages. This is particularly useful in applications such as power distribution systems, motor starters and electronic power supplies.The working principle of the CSD22204WT relies on a simple concept known as channel enhancement. This works by using an electric field to shift the charge carriers within the channel and thus increasing the on state current. The amount of current that can flow through the channel is determined by the voltage on the gate terminal. When the voltage applied to the gate is increased, the current flow through the channel increases, and the device turns on. Since the operation of the device is bounded by the drain to source voltage and the gate voltage, the device is said to be an enhancement-mode MOSFET.The CSD22204WT provides excellent performance in a wide range of applications, from high-power switching and motor control to power distribution systems and voltage detection. It is an ideal choice for a variety of applications due to its low on-resistance, low gate charge, and low input capacitance, as well as its ability to operate at high switching speeds. Additionally, the device is capable of providing reliable operation over temperature and voltage variations, allowing for improved performance in a number of applications.

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