DMN6075S-13 Allicdata Electronics
Allicdata Part #:

DMN6075S-13DI-ND

Manufacturer Part#:

DMN6075S-13

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 2A SOT23-3
More Detail: N-Channel 60V 2A (Ta) 800mW (Ta) Surface Mount SOT...
DataSheet: DMN6075S-13 datasheetDMN6075S-13 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.03902
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 800mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 606pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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DMN6075S-13 is an N-channel power MOSFET which belongs to the range of BSD202N, BSD203N, BSD202P and BSD203P family. It is mainly used as a switch in a wide variety of applications. It features a maximum drain current of 75A and a maximum drain-source voltage of 100V which makes it ideal for this task.

The main principle of operation of a power MOSFET is based on the use of a metal oxide semiconductor field-effect transistor (MOSFET). A MOSFET is a type of transistor which uses a metallic gate electrode that is insulated from the drain region. This arrangement enables the transistor to remain ‘off’ when no gate voltage is present. When a gate voltage is applied, the transistor turns ‘on’ by allowing current to flow from the drain to the source. This, in turn, enables DMN6075S-13 to act as a switch in a wide range of applications.

The DMN6075S-13 has a broad range of applications and can be used in a variety of systems, such as in power supplies, audio amplifiers, motor control systems, lighting control systems, automotive applications and industrial applications. In addition, it can be used in high power switching applications such as high wattage LEDs, lighting systems and various types of power transistors.

In high power switching applications, DMN6075S-13 can be used to switch large currents with low On-Resistance (RDS(on)) and a low gate drive voltage. For example, it can switches up to 70A with a gate-drive voltage of 12V. In addition, it has a low gate charge (Qg) which reduces the power loss in switching operations.

DMN6075S-13 can also be used in motor control systems. Its high current capabilities and low gate drive voltage makes it suitable for this application. It can control high current motor loads with a maximum PWM duty cycle of 95%. In addition, it has a high thermal stability which ensures that it can operate reliably for extended periods of time.

DMN6075S-13 is also widely used in automotive applications due to its low On-Resistance (RDS(on)) and low gate drive voltage. It can be used in various automotive systems such as DC/DC converters, power steering, fuel pumps and lighting control systems.

DMN6075S-13 is also suitable for industrial applications due to its low RDS(on) and high current handling capability. It can be used in power circuits for controlling industrial machinery or for power surveillance operations. In addition, it can be used for gas furnace circuits, where it can act as a switch for high power loads.

In conclusion, DMN6075S-13 is a versatile N-channel power MOSFET which is suitable for use in a wide variety of applications. It can be used in high power switching applications such as lighting systems, audio amplifiers, motor control systems and automotive systems. In addition, it is also suitable for industrial applications such as power surveillance, industrial machinery control and gas furnace circuits. Therefore, the DMN6075S-13 is an ideal choice for those who require a reliable and high performing power MOSFET.

The specific data is subject to PDF, and the above content is for reference

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