DMN67D7L-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	210mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	0.821nC @ 10V
Vgs (Max):	±40V
Input Capacitance (Ciss) (Max) @ Vds:	22pF @ 25V
FET Feature:	--
Power Dissipation (Max):	570mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-3
Package / Case:	TO-236-3, SC-59, SOT-23-3

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Introduction

DMN67D7L-7 is a single N-channel metal oxide semiconductor (MOSFET) transistor. This type of MOSFET technology is used in many different electronics applications because of its speed, low power consumption, and its ability to provide low resistance when operating at higher voltages. This type of transistor is also known as a field effect transistor (FET) because the channel between source and drain terminals is controlled by an electric field.

Applications

DMN67D7L-7 is typically used in applications such as power line isolation and control, DC-DC converters, voltage regulators, motor control, and switching power supplies. It is also used as a replacement for a power-FET or IGBT in some applications.In addition, this type of MOSFET can be used in battery-operated equipment, as an alternative to BJT transistors in switching transformer circuits, and as a load switch in cell phone and computer systems.

Working Principle

DMN67D7L-7 uses a single N-channel MOSFET to control the power flow between the source and drain terminals. When the gate of the transistor is driven with a voltage, the current flow between the source and drain terminal will change accordingly. The gate voltage controls the flow of electrons through the channel, which in turn allows the transistor to be used as an amplifier, voltage regulator, driver, switch, or current regulator. The voltage on the gate affects the current flow through the channel, and with the proper application of voltages, the transistor is easily configured for a variety of operations.

Performance

The performance of the DMN67D7L-7 depends on a number of factors, such as the voltage applied to the gate, the thickness of the dielectric layer between the gate and the channel, and the size and shape of the channel. The transistor is also sensitive to temperature, so it must be operated within a specific temperature range.The DMN67D7L-7 has a maximum drain-to-source voltage of 100V and a maximum drain current of 20A. It also has a maximum power dissipation of 480W and a switching speed of 1µs. The transistor has a breakdown voltage between drain and source of 500V and a thermal resistance of 0.26 K/W.

Conclusion

DMN67D7L-7 is an ideal choice for a wide range of applications that require a low-cost and fast-switching device. This type of MOSFET can be used to control power flow in many different types of circuits, from switching power supplies to voltage regulators to motor control. The proper application of voltages can be used to configure the device for a variety of operations, such as acting as an amplifier or switch, or even as a current regulator. The DMN67D7L-7 also has a range of performance characteristics, such as a drain-to-source voltage of 100V, a drain current of 20A, a maximum power dissipation of 480W, and a breakdown voltage between drain and source of 500V.

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