DMN63D1L-13

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DMN63D1L-13 is a n-channel single field-effect transistor designed to meet the requirements of electronic switching applications. It is used to create switch mode power supplies, as well as in a wide range of other digital and analog circuit boards. The DMN63D1L-13 has several key features that make it a great choice for these applications.

First, the DMN63D1L-13 is a through-hole installation device, which makes it easy for applications that require assembly on a printed circuit board. This device has a maximum drain-source voltage of 20 V, a low on-resistance of 0.2 Ω, and a high switching speed of 10 MHz. These features make the device ideal for high-power flow switching. The device also features a low drain-source voltage drop of 0.8 V and an efficient on-resistance at 1.2 mΩ.

In addition, the DMN63D1L-13 has a p-channel matching device, which allows for the use of complementary MOSFETs in applications such as electronic power switch control and power amplifier design. For applications that require a high level of accuracy, the device also offers a tightly matched on-resistance of 0.2 Ω across adjacent pins.

The DMN63D1L-13 utilizes MOSFET technology to deliver the desired switching performance. This technology takes advantage of the unique characteristics of MOSFETs and allows for a wide range of applications. MOSFETs are known for their low power dissipation and fast switching speed and the DMN63D1L-13 utilizes this technology to provide an optimal level of performance.

At the heart of DMN63D1L-13 is the maximized vertical channel structure, which allows for high frequency performance. The maximized vertical channel structure provides an efficient energy flow through the device and reduces the on-resistance for a given size mask. This structure reduces the electric field across the drain-source region and reduces switching losses.

Furthermore, the DMN63D1L-13 is designed with a low gate-threshold voltage of 1.2 V and a high gate-charge of 24 nC. These features allow for fast switching operations and the highest possible efficiency, making the DMN63D1L-13 an ideal solution for applications requiring an efficient, high-speed switching device.

In conclusion, the DMN63D1L-13 is an ideal choice for a variety of electronic switching applications. Its low power dissipation, high frequency performance, and tight on-resistance give it an edge over other devices in this class. Its through-hole installation and efficient vertical channel structure make it a great choice for applications in digital and analog circuit boards. Additionally, its low gate-threshold voltage and high gate-charge provide fast switching operations and the highest possible efficiency.

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