DMN60H080DS-7

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The DMN60H080DS-7 is a type of silicon N-Channel MOSFET, also known as an insulated gate field-effect transistor. It is manufactured from a compound semiconductor material and consists of two p–n junctions connected in series, along with a gate electrode connected to the p–n junctions. The DMN60H080DS-7 is designed for use in high-speed power switching applications, such as controllers and inverters, and is able to operate at frequencies up to 1GHz.

The DMN60H080DS-7 has a maximum drain-source voltage of 800V, a drain-source current of 60A, and a drain-source resistance of 0.0035Ω. It is also capable of peak gate and drain currents of 35A and 3200A, respectively. The device is equipped with a built-in temperature protection feature, which prevents it from operating beyond its maximum junction temperature of 175°C. The DMN60H080DS-7 also features a low threshold voltage of 2.5V, making it ideal for use in high-speed switching applications.

The main principle of operation of the DMN60H080DS-7 is the same as other MOSFETs: when a voltage is applied to the gate, holes in the semiconductor material are attracted to the area around the drain and source contacts, allowing current to flow between them. The DMN60H080DS-7 also has an insulated gate, which prevents this current from flowing in the reverse direction.

The main application field of the DMN60H080DS-7 is high-speed power switching. It is designed for use in DC-DC converters, motor drive systems, inverters, portable consumer electronics and other high-power switch applications. It is particularly useful for applications such as motor control, where its low threshold voltage, high on-resistance and high maximum drain-source voltage make it well-suited for switching high-power loads efficiently and quickly.

The DMN60H080DS-7 is a versatile MOSFET, designed for use in high-power switching applications. Its low threshold voltage and high on-resistance make it ideal for switching high-power loads quickly and efficiently, while its insulated gate prevents the current from flowing in the reverse direction. Additionally, its built-in temperature protection feature keeps the device safe from exceeding its maximum junction temperature.

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