DMN6070SY-13

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The DMN6070SY-13 is a type of MOSFET, a type of transistor specifically designed for switching applications. It is a single MOSFET, meaning it is comprised of a single vertical N-channel MOSFET integrated on the same chip. It is a highly advanced chip, with an impressive performance and cost profile, making it a popular choice for many designers.

The DMN6070SY-13 is a N-channel MOSFET, meaning it is made of four regions consisting of a P-channel and N-channel source, a P-channel drain, and a single gate. The DMN6070SY-13 utilizes depletion-mode operation, meaning it is normally OFF, and requires a positive voltage applied to it in order to turn it ON. It has a gate-source breakdown voltage (V_GS) of 10 V and a drain-source breakdown voltage (V_DS) of 60 V, making it suitable for low voltage applications. It also has a drain-source on-resistance (R_DS(ON)) of 7.0 mΩ, a maximum drain current (I_D) of 0.7 A, and a maximum junction temperature of 175°C.

The DMN6070SY-13 has a variety of applications. It can be used in a wide range of digital circuits and analog circuits. In digital circuits, the DMN6070SY-13 can be used as a switch, operating as either an ON or OFF state. It is also used in logic circuits, where it can be used as an input or output. Additionally, the DMN6070SY-13 can be used as a DC-DC converter, as well as a voltage regulator, making it ideal for use in power-saving or power-down applications.

Moreover, the DMN6070SY-13 can be used as a high-speed switching power supply in high power circuits, such as those used in industrial applications. It can also be used in high-performance automotive circuits, allowing it to perform power conversion and switching on lighter loads. The DMN6070SY-13 can also be used in audio and video amplifiers, thanks to its low distortion. In such applications, its fast-switching capabilities can help to achieve higher fidelity audio and video performance.

The DMN6070SY-13 works on the principle of junction field effect. A junction field effect MOSFET is a transistor requiring a voltage difference between its gate and source in order to turn the transistor on or off. When the gate and source have the same voltage, the transistor is off. When the voltage difference is applied, the transistor enters into its ON state and allows current to pass through it. Additionally, the channel is opened and negatively charged free electrons flow through the conducting channel.

The DMN6070SY-13 has several advantages over other MOSFETs due to its small size and high-performance design. Its low on-resistance allows for higher current densities and better switching performance. Moreover, it is capable of operating at very high temperatures and has a low gate capacitance, making it well-suited for high-speed switching applications. In addition, the DMN6070SY-13 is immune to Electrostatic Discharge (ESD) and is lead-free, making it an environmentally friendly choice.

In summary, the DMN6070SY-13 is an advanced MOSFET, which is highly suited for switching applications. It is a single N-channel MOSFET made up of four regions, and utilizes depletion-mode operation. The DMN6070SY-13 has a variety of applications, from digital and power applications to audio and video amplifiers. It works on the principle of junction field effect, allowing current to flow through it when the voltage difference between its gate and source is applied. Additionally, it has several advantages over other MOSFETs, such as its small size, high-performance design, and immunity to Electrostatic Discharge.

The specific data is subject to PDF, and the above content is for reference