Allicdata Part #: | DMN61D9UW-13DI-ND |
Manufacturer Part#: |
DMN61D9UW-13 |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.34A SOT323 |
More Detail: | N-Channel 60V 340mA (Ta) 320mW (Ta) Surface Mount ... |
DataSheet: | DMN61D9UW-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.03116 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 340mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 5V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 50mA, 5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 0.4nC @ 4.5V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 28.5pF @ 30V |
FET Feature: | -- |
Power Dissipation (Max): | 320mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-323 |
Package / Case: | SC-70, SOT-323 |
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The DMN61D9UW-13 is an advanced, powerful single-channel, N-channel MOSFET transistor. It is designed for high-current switching applications, such as motor control, power management, and high-voltage, low-current applications. The device has been manufactured as a compact, low-profile surface-mount device with a lead pitch of just 3.2 mm.
The DMN61D9UW-13 transistor is designed to operate over a wide range of voltages, from 60V to 500V. It is able to handle a steady current of up to 100A, and can operate at a temperature of up to 175°C. It has a very low threshold voltage of just 0.9V, allowing it to switch quickly and efficiently. Its low input capacitance also provides a low turn-on delay time.
The DMN61D9UW-13 is well-suited for a variety of applications, including motor control, home appliance control, AC/DC circuits, battery management, light emitting diode (LED) lighting, switch mode power supplies, inverters, and power converters. The device can also be used in a variety of electronic circuits for in automotive, industrial, and consumer products. As it utilizes the MOSFET technology, its load figure is optimized to reduce power losses.
In its operation, the DMN61D9UW-13 is able to protect circuit components from over-voltage and over-current, both through its inherent electrostatic discharge (ESD) protection and through its built-in inrush current suppression. Its thermal shutdown protection protects the device from operating outside its temperature range. It also incorporates a fault latch function, which will shut the device off if it detects an over-voltage or over-current condition.
In terms of its working principle, the DMN61D9UW-13 operates on the principles of MOSFET technology, which involves a structure of thin-film transistors arranged in a vertical (or flat) plane. This technology enables the device to operate at very high speeds, with low voltage drop and low thermal resistances. In addition, it has very low input and output capacitances, which allow it to switch quickly and efficiently and to dissipate power without the need for a driver circuit. This helps reduce power losses and improves efficiency in the circuit.
In conclusion, the DMN61D9UW-13 is a powerful and versatile single-channel, N-channel MOSFET designed for motor control, power management, and high-voltage, low-current applications. It is well-suited for a variety of applications, and its low threshold voltage, low input capacitance and fault latch function makes it a great choice for these applications. Furthermore, its working principle is based on the principles of MOSFET technology, which allows it to operate at very high speeds, with low power loss.
The specific data is subject to PDF, and the above content is for reference
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