DMN63D1L-7

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	380mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	0.3nC @ 4.5V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	30pF @ 25V
FET Feature:	--
Power Dissipation (Max):	370mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23
Package / Case:	TO-236-3, SC-59, SOT-23-3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

DMN63D1L-7 is a power MOSFET transistors. It belongs to the group of transistors known as Field Effect Transistors (MOSFET) and is a single transistor. This MOSFET has an insulated-gate type, which is generally characterized by higher transconductance than traditional transistors. They are usually utilized in power converter and high power handling applications. It has a 4A, 600V rating which is suitable for handling higher voltage and current levels.

Applications

The DMN63D1L-7 transistor has wide range of applications. It is broadly used in high power and heavy load applications by its high voltage and current ratings. It is commonly used in applications such as switching, power amplifiers, power converters, power supplies, and voltage regulators. An example of its use in switching applications is a DC to AC power inverter. In an inverter scenario, the DMN63D1L-7 transistor can be used to turn a DC power source into an AC signal with precision, efficiency, and a high level of power handling capability. It can also be used in switching power supplies where it can be used to control the voltage and current through the system.In power amplifiers, the DMN63D1L-7 transistor can be used as a driver to control the power output and provide a high level of performance. It is also used in power converters, for example, to provide efficient and reliable control in motor drives, or in photovoltaic inverters. Finally, it can also be used in voltage regulators, such as those found in automotive, commercial, and industrial electronics, which require the ability to precisely regulate the output power.

Working Principle and Characteristics

The DMN63D1L-7 transistor works by utilizing a unique four-layer structure consisting of a drain, gate, source, and body. The gate receives voltage and current signals through a gate oxide layer which isolates the source and drain. This allows for the transistor to start, or stop, the flow of current between the source and drain. When the transistor is on, it provides a low resistance between the source and drain. When the transistor is off, the resistance is high and no current can flow.The DMN63D1L-7 transistor also has other features that make it suitable for a wide range of applications. For instance, its high voltage and current ratings make it suitable for high power and heavy load applications. Additionally, its insulated-gate type means that it allows for a higher transconductance which is an important factor in amplifying and controlling current and voltage signals.

Conclusion

The DMN63D1L-7 power MOSFET transistor is an ideal choice for applications that require high voltage and current ratings, as well as efficient and reliable control. It has a unique four-layer structure that provides a high level of power handling capability, as well as a higher transconductance than traditional transistors. From switching applications such as DC to AC inverters to power amplifiers and voltage regulators, the DMN63D1L-7 transistor is widely used for various applications and is sure to provide excellent performance in high power and heavy load scenarios.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description